@ARTICLE{Kopyt_P._Measurements_2019,
 author={Kopyt, P. and Salski, B. and Pacewicz, A. and Zagrajek, P. and Marczewski, J.},
 volume={vol. 27},
 number={No 2},
 journal={Opto-Electronics Review},
 pages={123-129},
 howpublished={online},
 year={2019},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector’s effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivity of various devices (e.g., MOSFETs, HEMTs etc.). As a demonstration, the sub-THz responsivity of a pHEMT device fabricated using a commercial GaAs process has been measured in a WR-3 frequency band. Additionally, the results have been compared against data obtained using an alternative approach. The verification method consisted in integrating exactly the same device with a broad-band antenna and a carefully selected high-resistivity silicon lens and comparing its performance with that of a commercial calibrated detector based on Schottky diodes.},
 type={Article},
 title={Measurements of the responsivity of FET‐based detectors of sub‐THz radiation},
 URL={http://journals.pan.pl/Content/115245/PDF/opelre_2019_27_2_123-129.pdf},
 keywords={Lenses, Electromagnetic analysis, Submillimeter wave detectors, Responsivity},
}