@ARTICLE{Martyniuk_Piotr_Theoretical_2019, author={Martyniuk, Piotr and Michalczewski, Krystian and Tsai, T.Y. and Wu, C.H. and Wu, Y.R.}, volume={vol. 27}, number={No 3}, journal={Opto-Electronics Review}, pages={275-281}, howpublished={online}, year={2019}, publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology}, abstract={The paper reports on the barrier mid-wave infrared InAs/InAsSb (xSb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, xSb = 0.97; barrier doping, ND < 2×1016 cm−3 leading to valence band offset below 100 meV in relation to the active layer doping, ND = 5×1015 cm−3 was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ∼ 1011 Jones at T ∼ 100 K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τs = 420 ps (T ∼ 77 K) was presented with a reduced active layer of d = 1 μm.}, type={Article}, title={Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling}, URL={http://journals.pan.pl/Content/115262/PDF/opelre_2019_27_3_275-281.pdf}, keywords={MWIR, T2SLs InAs/InAsSb, Barrier detector, Bariode}, }