@ARTICLE{Sandhya_K._Optimization_2018,
 author={Sandhya, K. and Bhardwaj, G. and Dolia, R. and Lal, P. and Kumar, S. and Dalela, S. and Rahman, F. and Alvi, P.A.},
 volume={vol. 26},
 number={No 3},
 journal={Opto-Electronics Review},
 pages={210-216},
 howpublished={online},
 year={2018},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ∼60 Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In0.29Ga0.71As0.99N0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ∼60 Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ∼2 × 1018cm−3 the optical gain of the nano-heterostructure is of 2100 cm−1 at the wavelength is of 1.30 μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30 μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.},
 type={Article},
 title={Optimization of optical characteristics of In0.29Ga0.71As0.99N0.01/GaAs straddled nano-heterostructure},
 URL={http://journals.pan.pl/Content/115317/PDF/main.pdf},
 keywords={InGaAsN, Optical gain, Gain compression, Heterostructure},
}