@ARTICLE{Marczewski_J._THz_2018,
 author={Marczewski, J. and Coquillat, D. and Knap, W. and Kolacinski, C. and Kopyt, P. and Kucharski, K. and Lusakowski, J. and Obrebski, D. and Tomaszewski, D. and Yavorskiy, D. and Zagrajek, P. and Ryniec, R. and Palka, N.},
 volume={vol. 26},
 number={No 4},
 journal={Opto-Electronics Review},
 pages={261-269},
 howpublished={online},
 year={2018},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.},
 type={Article},
 title={THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy},
 URL={http://journals.pan.pl/Content/115325/PDF/main.pdf},
 keywords={Submillimeter wave detectors, THz detectors, THz imaging, THZ spectroscopy, CMOS technology},
}