@ARTICLE{Litovchenko_V._Characterization_2017,
 author={Litovchenko, V. and Evtukh, A. and Grygoriev, A.},
 volume={vol. 25},
 number={No 3},
 journal={Opto-Electronics Review},
 pages={251-262},
 howpublished={online},
 year={2017},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease in the Fowler-Nordheim plot slope. It was shown that the energy difference between the main and satellite valley in GaN was decreased in the case of quantum confinement, thus increasing the probability of electron transition from Γ to X valley at same electric fields. Investigations of electron photo-field emission demonstrated that the Fowler–Nordheim plots of the emission current have different slopes for nonilluminated and illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination the emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band.},
 type={Article},
 title={Characterization of GaN nanostructures by electron field and photo-field emission},
 URL={http://journals.pan.pl/Content/115375/PDF/main.pdf},
 keywords={GaN nanostructures, Electron field emission, Photo-field emission, Electron redistribution, Illumination, Quantum effects},
}