@ARTICLE{Bychto_L._Influence_2016,
 author={Bychto, L. and Maliński, M.},
 volume={vol. 24},
 number={No 2},
 journal={Opto-Electronics Review},
 pages={58-61},
 howpublished={online},
 year={2016},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The paper presents experimental results of the lifetime of light induced excess carriers in the n-type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.},
 type={Article},
 title={Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method},
 URL={http://journals.pan.pl/Content/115980/PDF-MASTER/pan_doi_blank.pdf},
 keywords={photoacoustics, carrier lifetime, SHR statistics},
}