@ARTICLE{Alyoruk_M.M._AlSb_2015,
 author={Alyoruk, M.M. and Ergun, Y. and Hostut, M.},
 volume={vol. 23},
 number={No 1},
 journal={Opto-Electronics Review},
 pages={24-27},
 howpublished={online},
 year={2015},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={This study is based on the investigation of AlSb layer thickness effect on heavy−hole light−hole (HH−LH) splitting and band gap energies in a recently developed N−structure based on InAs/AlSb/GaSb type II superlattice (T2SL) p−i−n photodetector.eFirst principle calculations were carried out tailoring the band gap and HH−LH splitting energies for two possible interface transition alloys of InSb and AlAs between InAs and AlSb interfaces in the superlattice. Results show that AlSb and InAs−GaSb layer thicknesses enable to control HH−LH splitting energies to desired values for Auger recombination process where AlSb/GaSb total layer thickness is equal to InAs layers for the structures with InSb and AlAs interfaces},
 type={Article},
 title={AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices},
 URL={http://journals.pan.pl/Content/116115/PDF-MASTER/pan_doi_blank.pdf},
 keywords={InAs/AlSb/GaSb type−II SL structure, HH−LH splitting, N−structure, DFT, layer thickness effect},
}