@ARTICLE{Kopytko_Małgorzata_Different_2015,
 author={Kopytko, Małgorzata and Kębłowski, A. and Gawron, W. and Madejczyk, P.},
 volume={vol. 23},
 number={No 2},
 journal={Opto-Electronics Review},
 pages={143-148},
 howpublished={online},
 year={2015},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemi- cal vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-Bp′, n+-Bp′, p+-Bp) were analysed in terms of various electrical and optical properties of the detectors, such as dark current, current responsivity time constant and detectivity. The devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10-4 A/cm2 at 230 K and the maximum photoresponse of about 2 A/W in wide range of reverse bias voltage. The time constant of measured de- vices with n-type cap contact and p-type absorbing drops below 1 ns with reverse bias while the detectivity is at the level of 1010 cm ∙ Hz1/2/W.},
 type={Article},
 title={Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors},
 URL={http://journals.pan.pl/Content/116134/PDF-MASTER/pan_doi_blank.pdf},
 keywords={HgCdTe, barrier infrared detector, high operating temperature, MOCVD},
}