@ARTICLE{Dyakonova_N._AlGaN/GaN_2015,
 author={Dyakonova, N. and But, D.B. and Coquillat, D. and Knap, W. and Drexler, C. and Olbrich, P. and Karch, J. and Schafberger, M. and Ganichev, S.D. and Ducournau, G. and Gaquiere, C. and Poisson, M.A. and Delage, S. and Cywinski, G. and Skierbiszewski, C.},
 volume={vol. 23},
 number={No 3},
 journal={Opto-Electronics Review},
 pages={195-199},
 howpublished={online},
 year={2015},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.},
 type={Article},
 title={AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation},
 URL={http://journals.pan.pl/Content/116139/PDF/opelre_2015_25.pdf},
 keywords={terahertz, photoresponse, HEMT, ALGaN/GaN},
}