@ARTICLE{Sypniewska_M._Structural,_2020,
 author={Sypniewska, M. and Szczesny, R. and Popielarski, P. and Strzalkowski, K. and Derkowska-Zielinska, B.},
 volume={28},
 number={4},
 journal={Opto-Electronics Review},
 pages={182-190},
 howpublished={online},
 year={2020},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.},
 type={Article},
 title={Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method},
 URL={http://journals.pan.pl/Content/117523/PDF-MASTER/OPELRE_28_2020_M_SYPNIEWSKA.pdf},
 doi={10.24425/opelre.2020.134460},
 keywords={FTIR and Raman spectroscopies, photoluminescence, SEM, XRD, ZnO thin films},
}