TY - JOUR N2 - In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%. L1 - http://journals.pan.pl/Content/106716/PDF/AMM-2018-2-62-Kulesza.pdf L2 - http://journals.pan.pl/Content/106716 PY - 2018 IS - No 2 DO - 10.24425/122436 KW - black silicon KW - low temperature texturization KW - silicon nanowires KW - solar cells KW - multicrystalline silicon A1 - Kulesza-Matlak, G. A1 - Gawlińska, K. A1 - Starowicz, Z. A1 - Sypień, A. A1 - Drabczyk, K. A1 - Drabczyk, B. A1 - Lipiński, M. A1 - Zięba, P. PB - Institute of Metallurgy and Materials Science of Polish Academy of Sciences PB - Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences VL - vol. 63 DA - 2018.06.30 T1 - Black Silicon Obtained in Two-Step Short Wet Etching as a Texture for Silicon Solar Cells – Surface Microstructure and Optical Properties Studies UR - http://journals.pan.pl/dlibra/publication/edition/106716 T2 - Archives of Metallurgy and Materials ER -