TY - JOUR N2 - Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted. L1 - http://journals.pan.pl/Content/115232/PDF/opelre_2019_27_1_14-17.pdf L2 - http://journals.pan.pl/Content/115232 PY - 2019 IS - No 1 EP - 17 KW - HgCdTe KW - Implantation KW - Defects KW - Microscopy A1 - Izhninab, I.I A1 - Fitsych, O.I. A1 - Świątek, Z. A1 - Morgiel, Y. A1 - Bonchyk, O.Yu. A1 - Savytskyy, H.V. A1 - Mynbaev, K.D. A1 - Voitsekhovskii, A.V. A1 - Korotaev, A.G. A1 - Yakushev, M.V. A1 - Varavin, V.S. A1 - Dvoretsky, S.A. PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 27 DA - 21.01.2019 T1 - Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride SP - 14 UR - http://journals.pan.pl/dlibra/publication/edition/115232 T2 - Opto-Electronics Review ER -