TY - JOUR N2 - Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed. L1 - http://journals.pan.pl/Content/115369/PDF/main.pdf L2 - http://journals.pan.pl/Content/115369 PY - 2017 IS - No 3 EP - 214 KW - mid-infrared range KW - luminescence KW - nanostructures A1 - Mynbaev, K.D. A1 - Shilyaev, A.V. A1 - Semakova, A.A. A1 - Bykhanova, E.V. A1 - Bazhenov, N.L. PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 25 DA - 24.07.2017 T1 - Luminescence of II–VI and III–V nanostructures SP - 209 UR - http://journals.pan.pl/dlibra/publication/edition/115369 T2 - Opto-Electronics Review ER -