Details

Title

AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Journal title

International Journal of Electronics and Telecommunications

Yearbook

2014

Numer

No 2

Publication authors

Divisions of PAS

Nauki Techniczne

Abstract

Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

Publisher

Polish Academy of Sciences Committee of Electronics and Telecommunications

Date

2014

Identifier

ISSN 2081-8491 (until 2012) ; eISSN 2300-1933 (since 2013)

DOI

10.2478/eletel-2014-0018

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