Details

Title

Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

Journal title

Metrology and Measurement Systems

Yearbook

2015

Volume

vol. 22

Numer

No 1

Publication authors

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation

Date

2015[2015.01.01 AD - 2015.12.31 AD]

Identifier

ISSN 0860-8229

References

Chen (2012), Analysis of temperature - dependent characteristics of a SiC metal - semiconductor - metal ultraviolet photodetector, Applied Physics, 57, 34, doi.org/10.1007/s11434-012-5494-3 ; Liu (2006), Demonstration of Ultraviolet SiC PIN Avalanche Photodiodes, IEEE Photonics Technology Letters, 18, 2508, doi.org/10.1109/LPT.2006.887211 ; Kim (2002), GaN metal - semiconductor - metal ultraviolet photodetector with IrO Schottky contact, Appl Phys Lett, 81, doi.org/10.1063/1.1524035 ; Chen (2001), GaN Metal - Semiconductor - Metal Ultraviolet Photodetectors With Transparent Indium - Tin - Oxide Schottky Contacts, IEEE Photonics Technology Letters, 8. ; Shur (2003), UV Solid - State Light Emitters and NATO II ISBN book, Detectors Science Series, 8, 144. ; Rogalski (1996), Semiconductor ultraviolet photodetectors, Appl Phys, 79. ; Zgorka (2001), Application of conventional UV photodiode array and fluorescence detection to analysis of phenolic acids in plant material and pharmaceutical preparations, Journal of Pharmaceutical and Biomedical Analysis, 24, 1065, doi.org/10.1016/S0731-7085(00)00541-0 ; Bielecki (2004), Photoreceiver for BLU / UV detection SPIE, Proc, 5472, doi.org/10.1117/12.547653 ; Kirschman (1999), Status of Silicon Carbide ( SiC as a WideBandgap Semiconductor for High Temperature Applications High - Temperature Electronics IEEE Press ISBN, Review, 11. ; Iucolano (2008), Influence of high - temperature GaN annealed surface on the electrical properties of Ni / GaN Schottky contacts, Appl Phys, 10, 104, doi.org/10.1063/1.3006133

DOI

10.1515/mms-2015-0010

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