Details

Title

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

Journal title

Bulletin of the Polish Academy of Sciences: Technical Sciences

Yearbook

2016

Numer

No 3 September

Publication authors

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences

Date

2016

Identifier

ISSN 0239-7528, eISSN 2300-1917

References

Tanner (2007), Electrical performance of Al gate dielectric films deposited by atomic layer deposition on, Let, 10, 203510. ; Robertson (2006), High dielectric constant gate oxides for metal oxide Si transistors, Prog Phys, 327, doi.org/10.1088/0034-4885/69/2/R02 ; Okamoto (2010), Improved inversion channel mobility in - SiC MOSFETs on Si face utilizing phosphorus - doped gate oxide, IEEE, 31, 710. ; Cheong (2007), Improved electronic performance of HfO / SiO stacking gate dielectric on SiC on, IEEE, 6, 3409. ; Seo (2009), and Conduction mechanism of leakage current due to the traps in ZrO thin film, Sci Technol, 24, 115016. ; Groner (2004), Low - temperature Al atomic layer deposition, Chem Mater, 16, 639, doi.org/10.1021/cm0304546 ; Cheong (2007), Analysis of current conduction mechanisms in atomic - layer - deposited Al gate on silicon carbide, Let, 90, 162113. ; Terman (1962), An investigation of surface states at a silicon / silicon oxide interface employing metal - oxide - silicon diodes Solid - State, Electron, 11, 285.

DOI

10.1515/bpasts-2016-0061

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