Szczegóły

Tytuł artykułu

Analytical and experimental determination of the parasitic parameters in high-frequency inductor

Tytuł czasopisma

Bulletin of the Polish Academy of Sciences: Technical Sciences

Rocznik

2017

Numer

No 1

Autorzy publikacji

Wydział PAN

Nauki Techniczne

Wydawca

Polish Academy of Sciences

Data

2017

Identyfikator

ISSN 0239-7528, eISSN 2300-1917

Referencje

Treu (2012), The role of silicon silicon carbide and gallium nitride in power electronics of San Francisco, Proc IEEE International Electron Devices Meeting, 7, 1. ; Liu (2016), Calculation of capacitance in high - frequency transformer windings on, IEEE Trans Magnetics, 52, doi.org/10.1109/TMAG.2016.2522976 ; Su (2011), High frequency inductor design and comparison for high efficiency high density pols with gan device of Congress and Exposition, Proc Energy Conversion, 2146. ; Zdanowski (2014), Design and evaluation reduced self - capacitance inductor in DC - DC converters with fast - switching SiC transistors On, IEEE Trans Power Electronics, 29, 2492, doi.org/10.1109/TPEL.2013.2281990 ; Biglarbegian (2016), Design and evaluation of high current pcb embedded inductor for high frequency inverters of Conference and Exposition, Proc Applied Power Electronics APEC, 2998. ; Zhang (2014), Impact of ringing on switching losses of wide bang - gap devices in a phase - leg configuration of Twenty - Ninth Annual Conference and Exposition Fort Worth, Proc IEEE Applied Power Electronics APEC, 2542. ; Gu (2003), Comparison of Si SiC and GaN FET - type switches for pulsed power applications of th International Pulsed Power Conference, Proc IEEE, 14. ; Weber (2005), Calculating parasitic capacitance of three - phase common - mode chokes of PCIM, Proc. ; Zdanowski (2012), The role of the parasitic capacitance of the inductor in boost converters with normally - on SiC JFETs of th and Motion Control Conference, Proc International Power Electronics, 1842. ; Millán (2014), A survey of wide bandgap power semiconductor devices, IEEE Trans Power Electron, 29, 2155, doi.org/10.1109/TPEL.2013.2268900 ; Liu (2016), Experimental extraction of parasitic capacitances for high - frequency transformers on, IEEE Trans Power Electronics. ; Josifović (2012), Improving SiC JFET switching behavior under influence of circuit parasitics on, IEEE Transactions Power Electronics, 27, 3843, doi.org/10.1109/TPEL.2012.2185951 ; Jain (2008), Comparision of wide band gap semiconductors for power electronics applications of International Conference on Recent Advances in Microwave Theory and Applications, Proc, 878. ; Nakajima (2009), Power loss limit in unipolar switching devices : Comparison between Si superjunction devices and wide - bandgap devices on, IEEE Transactions Electron Devices, 56, 2652, doi.org/10.1109/TED.2009.2031020 ; Gorecki (2015), The parameter estimation of the electrothermal model of inductors Informacije MIDEM - of Microelectronics, Journal Electronic Components and Materials, 45, 29. ; Valchev (2005), den Bossche Inductors and Transformers for Power Press Francis Group, Electronics. ; Rabkowski (2012), Silicon carbide power transistors : A new era in power electronics is initiated, IEEE Ind Electron Mag, 6, 17, doi.org/10.1109/MIE.2012.2193291

DOI

10.1515/bpasts-2017-0013

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