Details

Title

A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon

Journal title

Bulletin of the Polish Academy of Sciences: Technical Sciences

Yearbook

2016

Numer

No 4 December

Publication authors

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences

Date

2016

Identifier

ISSN 0239-7528, eISSN 2300-1917

References

Liu (2014), A high efficiency inverter based on SiC MOSFET without externally antiparalleled diodes Twenty - Ninth Annual Conference and Exposition, IEEE Applied Power Electronics, 163. ; Han (2013), Analysis of a SiC three - phase voltage source inverter under various current and power factor operations th Annual Conference of the IEEE Industrial, Electronics Society, 39, 447. ; Rabkowski (2013), Design steps towards a - kVA SiC JFET inverter with natural - convection cooling and an efficiency exceeding on, IEEE Transactions Industry Applications, 40, 1589, doi.org/10.1109/TIA.2013.2258132 ; Friedli (2014), The essence of three - phase PFC rectifier systems part II on, IEEE Transactions Power Electronics, 29, 543, doi.org/10.1109/TPEL.2013.2258472 ; Kampitsis (2013), Assessment of the reverse operational characteristics of SiC JFETs in a diode - less inverter th Annual Conference of the IEEE Industrial, Electronics Society, 39, 477. ; Han (2011), High density kW SiC inverter systems using a JFET based six - pack power module th International Conference on and ECCE Asia, Power Electronics, 8, 764. ; Funaki (2007), A study on SiC devices in synchronous rectification of DC - DC converter Twenty Second Annual Conference, IEEE Applied Power Electronics, 339. ; Fonteneau (2013), Predicting static losses in an inverter - leg built with SiC normally - off JFETs and SiC diodes Twenty - Eighth Annual Conference and Exposition, IEEE Applied Power Electronics, 2636. ; Lai (2010), A high - power - density converter, IEEE Industrial Electronics Magazine, 4, doi.org/10.1109/MIE.2010.938722 ; Ållebrand (2001), Nee On the choice of blanking times at turn - on and turn - off for the diode - less SiC JFET inverter bridge European Conference on and Applications, Power Electronics. ; Rabkowski (2012), SiC power transistors a new era in power electronics is initiated, IEEE Industrial Electronics Magazine, 6, 17, doi.org/10.1109/MIE.2012.2193291 ; Milan (2014), and A survey of wide bandgap power semiconductor devices on, IEEE Transactions Power Electronics, 29, 2155, doi.org/10.1109/TPEL.2013.2268900 ; Casanellas (1994), Losses in PWM inverters using IGBTs, IEE Proc Power Appl, 141. ; Rice (2014), Economics of high efficiency SiC MOSFET based - ph motor drive of PCIM Europe, Proc, 1. ; Whitaker (2014), A high - density high - efficiency isolated on - board vehicle battery charger utilizing silicon carbide power devices on, IEEE Transactions Power Electronics, 29, 2606, doi.org/10.1109/TPEL.2013.2279950 ; Wood (2010), Urciuoli Reverse conduction of a A SiC MOSFET module in high - power applications Conference and Exposition, Applied Power Electronics, 100, 1568. ; Sheridan (2012), Reverse conduction properties of vertical SiC trench JFETs th on Devices and ICs, International Symposium Power Semiconductor, 24, 385. ; Ouaida (2013), Piquet SiC vertical JFET pure diode - less inverter leg Conference and Exposition, Applied Power Electronics, 512. ; Colmenarez (2014), High - efficiency - phase inverter with SiC MOSFET power modules for motor - drive applications Congress and Exposition, Energy Conversion, 468. ; Alkayal (2013), Compact three phase inverter in silicon carbide technology for auxiliary converter used in railway applications th European Conference on and Applications EPE - ECCE Europe, Power Electronics, 15. ; Mestha (1989), Analysis of on - state losses in PWM inverters, IEE Proc, 136. ; Cai (2013), Characteristics and application of normally - off SiC - JFETs in converters without antiparallel diodes on, IEEE Transactions Power Electronics, 28, 4850, doi.org/10.1109/TPEL.2012.2237417 ; Xu (2013), Development of a SiC JFET - based six - pack power module for a fully integrated inverter on, IEEE Transactions Power Electronics, 28, 1464, doi.org/10.1109/TPEL.2012.2205946

DOI

10.1515/bpasts-2016-0099

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