Details

Title

Insight into performance of quantum dot infrared photodetectors

Journal title

Bulletin of the Polish Academy of Sciences Technical Sciences

Yearbook

2009

Volume

vol. 57

Issue

No 1

Authors

Divisions of PAS

Nauki Techniczne

Coverage

103-116

Date

2009

Identifier

DOI: 10.2478/v10175-010-0111-6 ; ISSN 2300-1917

Source

Bulletin of the Polish Academy of Sciences: Technical Sciences; 2009; vol. 57; No 1; 103-116

References

Gunapala S. (2002), Handbook of Infrared Detection Technologies, 83. ; Rogalski A. (2003), Quantum well photoconductors in infrared detector technology, J. Appl. Phys, 93, 4355. ; Towe E. (2000), Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors, IEEE J. Sel. Top. Quant, 6, 408. ; Boucaud P. (2003), Infrared photodetection with semiconductor self-assembled quantum dots, C. R. Phys, 4, 1133. ; Bhattacharya P. (2007), Mid-infrared Semiconductor Optoelectronics, 487. ; Krishna S. (2007), Quantum dot based infrared focal plane arrays, Proc. IEEE, 95, 1838. ; Varley E. (2007), Single bump, two-color quantum dot camera, Appl. Phys. Lett, 91, 081120. ; Ryzhii V. (2001), Device model for quantum dot infrared photodetectors and their dark-current characteristics, Semicond. Sci. Tech, 16, 331. ; Ryzhii V. (2001), On the detectivity of quantum-dot infrared photodetectors, Appl. Phys. Lett, 78, 3523. ; Ryzhii V. (2001), Analysis of the photocurrent in quantum dot infrared photodetectors, Jpn. J. Appl. Phys, 40. ; Vurgaftman I. (1994), Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasers, Phys. Rev, B50, 14309. ; Phillips J. (2002), Evaluation of the fundamental properties of quantum dot infrared detectors, J. Appl. Phys, 91, 4590. ; Stiff-Roberts A. (2004), Contrubution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors, IEEE Photonic. Techn. L, 16, 867. ; Williams G. (1992), Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors, Appl. Phys. Lett, 60, 1324. ; Lim H. (2006), Gain and recombination dynamics of quantum-dot infrared photodetectors, Phys. Rev, B74, 205321. ; Philips J. (1999), Self-assembled InAs-GaAs quantum dot intersubband detectors, IEEE J. Quantum Elect, 35, 936. ; Singh J. (2003), Electronic and Optoelectronic Properties of Semi-conductor Structures. ; Ye Z. (2003), Noise and photoconductive gain in InAs quantum-dot infrared photodetectors, Appl. Phys. Lett, 83, 1234. ; Wang S. (2007), Temperature dependent responsivity of quantum dot infrared photodetectors, Infrared Phys. Techn, 50, 166. ; Campbell J. (2007), Quantum-dot infrared photodetectors, Proc. IEEE, 95, 1815.
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