Details

Title

Surface smoothness improvement of HgCdTe layers grown by MOCVD

Journal title

Bulletin of the Polish Academy of Sciences: Technical Sciences

Yearbook

2009

Numer

No 2

Publication authors

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences

Date

2009

Identifier

ISSN 0239-7528, eISSN 2300-1917

References

Rogalski A. (2005), HgCdTe infrared detector material: history, status and outlook, Rep. Prog. Phys, 68, 2267, doi.org/10.1088/0034-4885/68/10/R01 ; Ghandhi S. (1986), Growth and properties of Hg<sub>1-x</sub>Cd<sub>x</sub>Te on GaAs substrates by organometalic vapor-phase epitaxy, J. Appl. Phys, 59, 2253, doi.org/10.1063/1.336371 ; Zhang L. (1998), A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe, J. Electron. Mater, 27, 634, doi.org/10.1007/s11664-998-0027-1 ; Cinader G. (1991), The effect of growth orientation on the morphology, composition, and growth rate of mercury cadmium telluride layers grown by metalorganic vapor phase epitaxy, J. Vac. Sci. Technol, B9, 1634, doi.org/10.1116/1.585436 ; Almeida L. (2006), Influence of substrate orientation on the growth of HgCdTe by molecular beam epitaxy, J. Electron. Mater, 35, 1214, doi.org/10.1007/s11664-006-0243-5 ; Irvine S. (1997), Narrowgap II-VI Compounds for Optoelectronic and Electromagnetic Applications, 71, doi.org/10.1007/978-1-4613-1109-6_3 ; Nishino H. (1995), Dislocation profiles in HgCdTe(100) on GaAs(100) grown by metalorganic chemical vapor deposition, J. Electron. Mater, 24, 533, doi.org/10.1007/BF02657959 ; Nishino H. (1999), Structure and surface properties of metalorganic vapor phase epitaxial CdTe and HgCdTe(111)B layers grown on vicinal GaAs(100) substrates, Jpn. J. Appl. Phys, 38, 5775, doi.org/10.1143/JJAP.38.5775 ; Piotrowski A. (2004), MOCVD growth of Hg<sub>1-x</sub>Cd<sub>x</sub>Te heterostructures for uncooled infrared photodetectors, Opto-Electron. Rev, 14, 453. ; Madejczyk P. (2005), Growth and properties of MOCVD HgCdTe epilayers on GaAs substrate, Opto-Electron. Rev, 13, 239. ; Triboulet R. (1993), Substrate issues for the growth of mercury cadmium telluride, J. Electron. Mater, 22, 827, doi.org/10.1007/BF02817493 ; Maxey C. (2007), Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays, J. Electron. Mater, 35, 1275, doi.org/10.1007/s11664-006-0254-2 ; Wang W.-S. (1997), (100) or (111) heteroepitaxy of CdTe layers on (100) GaAs substrates by organometallic vapor phase epitaxy, Materials Chemistry and Physics, 51, 178, doi.org/10.1016/S0254-0584(97)80290-8 ; Kim J.-S. (2004), The role of surface adsorbates on electrical properties of MOVPE grown HgCdTe onto (001) GaAs substrats, Solid-State Electronics, 48, 1623, doi.org/10.1016/j.sse.2004.02.018 ; Suh S.-H. (1996), Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe/GaAs with good electrical properties, J. Crystal Growth, 159, 1132, doi.org/10.1016/0022-0248(95)00697-4 ; Mora-Seró I. (2003), Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates, J. Crystal Growth, 257, 60, doi.org/10.1016/S0022-0248(03)01410-6 ; Feldman R. (1986), A comparison of CdTe grown on GaAs by molecular beam and organometallic vapor phase epitaxy, J. Vac. Sci. Technol, A4, 2234. ; Halis J. (2007), Influence of the silicon substrate on defect formation in MCT grown on II-VI buffered Si using a combined molecular beam epitaxy/metal organic vapor phase epitaxy technique, J. Electron. Mater, 36, 864, doi.org/10.1007/s11664-007-0113-9 ; Peterson J. (2006), High-quality large-area MBE HgCdTe/Si, J. Electron. Mater, 35, 1283, doi.org/10.1007/s11664-006-0255-1 ; Tribolet P. (2006), MWIR focal planes arrays made with HgCdTe grown by MBE on germanium substrates, Proc. SPIE, 6206, doi.org/10.1117/12.669120 ; Tian G. (2007), Surface measurement using active vision and light scattering, Optics and Lasers in Engineering, 45, 131, doi.org/10.1016/j.optlaseng.2006.03.005 ; Lorincik J. (1997), Focusing properties of hemispherical mirrors for total integrating scattering instruments, Applied Optics, 36, 8270, doi.org/10.1364/AO.36.008270 ; <i>Laser Scatterometer SL</i> 31. <i>Manual - calibration</i>, Polish Institute of Mathematical Machines, Warsaw <a target="_blank" href='http://www.imm.org.pl'>www.imm.org.pl</a> ; Piotrowski A. (2007), Metal-organic chemical vapor deposition of Hg<sub>1-x</sub>Cd<sub>x</sub>Te fully doped heterostructures without postgrowth anneal for uncooled MWIR and LWIR detectors, J. Electron. Mater, 36, 1052, doi.org/10.1007/s11664-007-0171-z

DOI

10.2478/v10175-010-0114-3

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