Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Journal title

Metrology and Measurement Systems




No 3

Publication authors

Divisions of PAS

Nauki Techniczne


Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation




ISSN 0860-8229


Starzak (2013), Behavioral approach to SiC MPS diode electrothermal model generation on, IEEE Transactions Electron Devices, 60, 630, ; Alexakis (2014), Improved electrothermal ruggedness in Sic mosfets compared with silicon IGBTS on, IEEE Transactions Electron Devices, 61, 2278, ; Górecki (2014), The influence of the selected factors on transient thermal impedance of semiconductor devices of the st International Conference Mixed Design of Integrated Circuits and Systems MIXDES, Proc, 21. ; Górecki (2014), The semiconductor device thermal model taking into account non - linearity and multhipathing of the cooling system of Physics :, Journal Conference Series, 494, ; Górecki (2015), An influence of the selected factors on the transient thermal impedance model of power MOSFET Informacije MIDEM - of Microelectronics , Electronic and Materials, Journal Components, 45, 110. ; Górecki (2015), The analysis of accuracy of the selected methods of measuring thermal resistance of IGBTs, Metrol Meas Syst, 22, 455, ; Myśliwiec (2015), Materials and technological aspects of high - temperature SiC device packages Reliability, Microelectronics International, 32, 143, ; Zarębski (2008), A Method of the Thermal Resistance Measurements of Semiconductor Devices with Junction, Measurement, 41, 259, ; Górecki (2014), Parameter estimation of the electrothermal model of the ferromagnetic core, Microelectronics Reliability, 54, 978, ; Szekely (1997), A New Evaluation Method of Thermal Transient Measurement Results, Microelectronic Journal, 28, 277, ; Buttay (2011), High - Temperature Behavior of SiC Power Devices of th European Conference on Power Electronics and Applications EPE, Proc, 1. ; Blackburn (1976), Transient Thermal Response Measurements of Power Transistors on and, IEEE Transactions Industrial Electronics Control Instrum, 22, 134. ; Székely (1998), Thermal Testing and Control by Means of Built - in Temperature Sensors, Electronics Cooling, 4, 36. ; Kisiel (2010), An Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Devices of ISSE, Proc, 128. ; Blackburn (2004), Temperature Measurements of Semiconductor Devices - th IEEE Semicon Thermal Measur and Menagement Symp SEMI - THERM San, Review, 20, 70. ; Buttay (2012), Thermal Stability of Silicon Carbide Power devices on, IEEE Transactions Electron Devices, 59, 761,