Details

Title

GaAs/AlGaAs (~9.4 μm) quantum cascade lasers operating at 260 K

Journal title

Bulletin of the Polish Academy of Sciences: Technical Sciences

Yearbook

2010

Numer

No 4 December

Publication authors

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences

Date

2010

Identifier

ISSN 0239-7528, eISSN 2300-1917

References

Page H. (2001), 300 K operation of GaAs based quantum-cascade laser at λ ≈ 9 μm, Appl. Phys. Lett, 78, 3529, doi.org/10.1063/1.1374520 ; Sirtori C. (2002), <i>GaAs</i> quantum cascade lasers: fundamentals and performance, EDP Sciences, 7, 1. ; Gmachl C. (2001), Recent progress in quantum cascade lasers and applications, Rep. Prog. Phys, 64, 1533, doi.org/10.1088/0034-4885/64/11/204 ; Sirtori C. (1998), GaAs/AlGaAs quantum cascade lasers, Appl. Phys. Lett, 73, 3486, doi.org/10.1063/1.122812 ; Harrison P. (2005), Quantum Wells, Wires and Dots: Theoretical and Computational Physics, doi.org/10.1002/0470010827 ; Kosiel K. (2008), Molecular beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures, Microelectronics J, 40, 565, doi.org/10.1016/j.mejo.2008.06.091 ; <a target="_blank" href='http://www.nextnano.de'>http://www.nextnano.de</a> ; Kosiel K. (2009), 77 K operation of AlGaAs/GaAs quantum cascade laser at 9 μm, Photonics Letters of Poland, 1, 16. ; Hofling S. (2006), Dependence of saturation effects on electron confinement and injector doping in GaAs/Al<sub>0.45</sub>Ga<sub>0.55</sub>As quantum-cascade lasers, Appl. Phys. Lett, 88, 251109, doi.org/10.1063/1.2214128 ; Szerling A. (2009), Electrical and optical characterisation of (λ ~9.4 μm) GaAs-based quantum cascade lasers, IEEE Proc. TERA-MIR, 1, 71.

DOI

10.2478/v10175-010-0045-z

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