Szczegóły

Tytuł artykułu

Ultrashort pulses supported by SESAM absorber

Tytuł czasopisma

Bulletin of the Polish Academy of Sciences: Technical Sciences

Rocznik

2010

Numer

No 4 December

Autorzy publikacji

Wydział PAN

Nauki Techniczne

Wydawca

Polish Academy of Sciences

Data

2010

Identyfikator

ISSN 0239-7528, eISSN 2300-1917

Referencje

Keller U. (1992), Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber, Opt. Lett, 17, 505, doi.org/10.1364/OL.17.000505 ; Look D. (1993), Molecular beam epitaxial GaAs grown at low temperature, Thin Solid Films, 231, 61, doi.org/10.1016/0040-6090(93)90703-R ; Sale T. (1995), Vertical Cavity Surface Emitting Lasers. ; Aframowitz M. (1974), Refractive Index of Ga<sub>1 - x</sub>Al<sub>x</sub>As, Solid State Commun, 15, 59, doi.org/10.1016/0038-1098(74)90014-3 ; Kokubo Y. (1997), Refractive index as a function of the photon energy for AlGaAs between 1.2eV and 1.8eV, J. Appl. Phys, 81, 4, 2042, doi.org/10.1063/1.364443 ; Stringfellow G. (1989), Organometallic Vapour Phase Epitaxy: Theory and Practice. ; Mazuelas A. (1997), Strain compensation in highly carbon doped GaAs/AlAs distributed Bragg reflectors, J. Cryst. Growth, 383, 175. ; Jasik A. (2009), SESAM - nonlinear semiconductor absorber - characterization and technology of production, null, 1. ; Kuleshov N. (1997), Pulsed laser operation of Y b-dope d KY(WO<sub>4</sub>)<sub>2</sub> and KGd(WO<sub>4</sub>)<sub>2</sub>, Opt. Lett, 22, 1317, doi.org/10.1364/OL.22.001317 ; Métrat G. (1999), Nucleation, morphology and spectroscopic properties of Yb<sup>3+</sup>-doped KY(WO<sub>4</sub>)<sub>2</sub> crystals grown by the top nucleated floating crystal method, J. Cryst. Growth, 197, 883, doi.org/10.1016/S0022-0248(98)00975-0 ; Klopp P. (2002), Passively mode-locked Yb-KYW laser pumped by a tapered diode laser, Optics Express, 10, 2, 108, doi.org/10.1364/OE.10.000108 ; Paunescu G. (2004), 100-fs diode-pumped Yb:KGW mode-locked laser, Appl. Phys, B 79, 555.

DOI

10.2478/v10175-010-0046-y

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