DC characteristics of the SiC Schottky diodes

Journal title

Bulletin of the Polish Academy of Sciences: Technical Sciences




No 2 June

Publication authors

Divisions of PAS

Nauki Techniczne


Polish Academy of Sciences




ISSN 0239-7528, eISSN 2300-1917


Friedrichs P. (2008), Silicon carbide power-device products - status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications, Phys. Stat. Sol, B 245, 7, 1232. ; Guy O. (2008), Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems, IEEE Power Electronics and Motion Control Conf, 1, 2464, ; Majumdar G. (2009), Some key researches on SiC device technologies and their predicted advantages, Power Semiconductors, 6, 18. ; Funaki T. (2007), Power conversion with SiC devices at extremely high ambient temperatures, IEEE Trans. on Power Electronics, 22, 4, 1321, ; <a target="_blank" href=''></a> ; <a target="_blank" href=''></a> ; Sheng K. (2009), Maximum junction temperatures of SiC power devices, IEEE Trans. on Electronic Devices, 56, 2, 337, ; Pyo S. (2009), Junction temperature dynamics of power MOSFET and SiC diode, Proc. IPEMC, 1, 269. ; Wrzecionko B. (2009), SiC power semiconductors in HEVs: influence of junction temperature on power density, chip utilization and efficiency, Preprint of Proc. IECON, 1. ; Janke W. (2003), Nonlinear thermal characteristics of silicon carbide devices, null, 1. ; Janke W. (1992), Thermal Phenomena in Semiconductor Elements and Systems. ; PSPICE Manual <a target="_blank" href=''></a> ; Janke W. (2010), Inluence of series resistance on thermal limitations of SiC Schottky diodes, null, 1. ; Janke W. (2010), The current-voltage characteristics of SiC Schottky barrier diodes with the self-heating included, null, 1. ; Janke W. (2007), Silicon carbide Schottky diode - a promising device for power electronics, PPEE, 1, 247.