Details

Title

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Journal title

Bulletin of the Polish Academy of Sciences: Technical Sciences

Yearbook

2015

Numer

No 3 September

Publication authors

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences

Date

2015[2015.01.01 AD - 2015.12.31 AD]

Identifier

ISSN 0239-7528, eISSN 2300-1917

References

Czyszanowski (2010), Thermal properties and wavelength analysis of telecom oriented photonic - crystal VCSELs, Electron Rev, 18, 56. ; Eliseev (1997), Line shape function for semiconductor laser modeling, Electron Lett, 33, 2046, doi.org/10.1049/el:19971385 ; Dier (2005), Effects of thermal annealing on the band gap of GaInAsSb, Appl Phys, 29, 151120. ; Bir (1974), Symmetry and Strain - induced Effects in Semiconductors New York, and. ; Kudrawiec (2007), Alloying of GaNxAs xwith InNxAs : a simple formula for the bandgap parametrization of Ga yInyNxAs xalloys, Appl Phys, 101, 023522, doi.org/10.1063/1.2424528 ; Arafin (2010), Large - aperture single - mode GaSb - based BTJ - VCSELs at μm nd Semiconductor Laser Conf, IEEE Int, 22, 47. ; Sarzała (2014), Optimization of GaInNAs quantum - well vertical - cavity surface - emitting laser emitting at μm, Appl Phys, 115, 961, doi.org/10.1007/s00339-013-7915-9 ; Sarzała (2012), An attempt to design long - wavelength μm InP based GaInNAs diode lasers, Appl Phys, 108, 521, doi.org/10.1007/s00339-012-6977-4 ; Bugajski (1997), Optical gain in quantum well lasers including many - body effects, Electron Technol, 30, 89. ; Joullié (2003), Mid - infrared μm heterojunction laser diodes inSolid - State Mid - Infrared Laser Sources vol pp Springer - Verlag, Topics Appl Phys, 89. ; Sarzała (2004), Performance characteristics of the - μm oxide - confined edge - emitting quantum - dot ( InGa ) As / GaAs diode lasers, Bull Tech, 52, 257. ; Werle (2002), Near - and mid - infrared laser - optical sensors for gas analysis, Opt Las Eng, 37, 101, doi.org/10.1016/S0143-8166(01)00092-6 ; Gruendl (2012), nm continuously tunable MEMS VCSEL devices with surface micromachining operating at μm emission wavelength, Sci Technol, 28, 012001. ; Sarzała (2011), Lasers with active regions of diluted nitrides on InP substrate emitting within a range of middle infrared ( in Polish, Electronics, 10, 82. ; Rothman (2009), The HITRAN molecular spectroscopic database Transfer, Quant, 8, 110. ; Vurgaftman (2003), Band parameters for nitrogen - containing semiconductors, and Appl Phys, 94, 3675, doi.org/10.1063/1.1600519 ; Li (2013), and Comprehensive analysis of GaSb - based mid - infrared vertical - cavity surface - emitting lasers SPIE, Proc, 8639. ; Donati (2003), Interpolating semiconductor alloy parameters : Application to quaternary III V band gaps, Appl Phys, 94, 5814, doi.org/10.1063/1.1613371 ; Schilt (2010), Spectral and modulation properties of a largely tunable MEMS - VCSEL in view of gas phase spectroscopy applications, Appl Phys, 100, 321, doi.org/10.1007/s00340-010-3898-9 ; Piskorski (2014), A possibility to achieve emission in the mid - infrared wavelength range from semiconductor laser active regions th Transparent Optical Networks, Int Conf, 16, 9. ; Piskorski (2013), GaInNAs quantum - well vertical - cavity surface - emitting lasers emitting at μm, and Bull Tech, 61, 737. ; Vurgaftman (2001), Band parameters for III - V compound semiconductors and their alloys, Appl Phys, 89, 5815, doi.org/10.1063/1.1368156 ; Overton (2013), VCSELs benefit TDLAS combustion measurements, Laser Focus World, 49, 13.

DOI

10.1515/bpasts-2015-0070

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