Search results

Filters

  • Journals
  • Keywords
  • Date

Search results

Number of results: 66
items per page: 25 50 75
Sort by:

Abstract

The study presents the results of theoretical investigations into lateral torsional buckling (LTB) of bi-symmetric I-beams, elastically restrained against warping at supports. Beam loading schemes commonly used in practice are taken into account. The whole range of stiffness of the support joints, from free warping to warping fully restrained, is considered. To determine the critical moment, the energy method is used. The function of the beam twist angle is described with power polynomials that have simple physical interpretation. Computer programs written in symbolic language for numerical analysis are developed. General approximation formulas are devised. Detailed calculations are performed for beams with end-plate joints. Critical moments determined with programs and approximation formulas are compared with the results obtained by other researchers and with those produced by FEM. Very good accuracy of results is obtained.
Go to article

Abstract

W średniowieczu warunki przyrodnicze wpływały na zakładane przez ludzi osiedla. One zaś oddziaływały na krajobraz. W jaki sposób? Odpowiedzi szukano we wczesnośredniowiecznym grodzisku w Santoku.
Go to article

Abstract

In the paper recent progress at VIGO/MUT (Military University of Technology) MOCVD Laboratory in the growth of Hg1-xCdxTe (HgCdTe) multilayer heterostructures on GaAs/CdTe substrates is presented. The optimum conditions for the growth of single layers and complex multilayer heterostructures have been established. One of the crucial stages of HgCdTe epitaxy is CdTe nucleation on GaAs substrate. Successful composite substrates have been obtained with suitable substrate preparation, liner and susceptor treatment, proper control of background fluxes and appropriate nucleation conditions. The other critical stage is the interdi#27;used multilayer process (IMP). The growth of device-quality HgCdTe heterostructures requires complete homogenization of CdTe-HgTe pairs preserving at the same time suitable sharpness of composition and doping profiles. This requires for IMP pairs to be very thin and grown in a short time. Arsenic and iodine have been used for acceptor and donor doping. Suitable growth conditions and post growth anneal is essential for stable and reproducible doping. In situ anneal seems to be sufficient for iodine doping at any required level. In contrast, efficient As doping with near 100% activation requires ex situ anneal at near saturated mercury vapours. As a result we are able to grow multilayer fully doped (100) and (111) heterostructures for various infrared devices including photoconductors, photoelectromagnetic and photovoltaic detectors. The present generation of uncooled long wavelength infrared devices is based on multijunction photovoltaic devices. The technology steps in fabrication of devices are described. It is shown that near-BLIP performance is possible to achieve at ≈ 230 K with optical immersion. These devices are especially promising as 7.8–9.5 um detectors, indicating the potential for achieving detectivities above 109 cmHz1/2/W.
Go to article

Abstract

Operational characteristic of wireless WiMax and IEEE 802.11x systems in underground mine environments The paper presents research results pertaining to transmission parameters of wireless communication systems, based on WiMax and IEEE 802.11x radio interfaces. Research was performed in severe operating conditions of an underground mine - testing various parameters, such as: throughput, delays and maximum range.
Go to article

Abstract

The article presents measurement results of prototype integrated circuits for acquisition and processing of images in real time. In order to verify a new concept of circuit solutions of analogue image processors, experimental integrated circuits were fabricated. The integrated circuits, designed in a standard 0.35 μm CMOS technology, contain the image sensor and analogue processors that perform low-level convolution-based image processing algorithms. The prototype with a resolution of 32 × 32 pixels allows the acquisition and processing of images at high speed, up to 2000 frames/s. Operation of the prototypes was verified in practice using the developed software and a measurement system based on a FPGA platform.
Go to article

Abstract

The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
Go to article

Abstract

Abstract The contents are concerned with a concept of an oilless and frictionless compressor operating without dead movement and having functional parameters superior to compressors of renowned manufacturers. The concept is based on patents No. 68220, 83060, P377851 by W. Chomczyk and patents P394072, P385733 by W. Chomczyk, W. Ostapski and J. Piotrowski. The proposed design of an oilless compressor ensures volumetric efficiency higher than that encountered in conventional compressors. It also generates pure compressed medium without necessity of filtering from oil particles, which is especially desired in food, pharmaceutical, medical, fragrance, chemical and automation industry.
Go to article

Abstract

In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N+pP+ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 1012 cm Hz1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
Go to article

This page uses 'cookies'. Learn more