In this work studies ofM OVPE growth of InAlGaAs/AlGaAs/GaAs heterostructures are presented. The HRXRD and SIMS measurements indicate the high structural and optical properties as well as high uniformity oft hickness and composition ofI nAlGaAs quantum wells. This work is the .rst step towards elaboration oft he technology oft he strained InAlGaAs/GaAs heterostructures for advanced optoelectronic devices working in the visible part oft he spectrum. The investigations ofSi (n-type), Zn (p-type) .-doped GaAs epilayers and centre Si-.-doped InxGa1-xAs single quantum well (SQW) are presented. The .-doping layer was formed by SiH4 or DEZn introduction during the growth interruption. The electrical and optical properties oft he obtained structures were examined using C-V measurement, EC-V electrochemical pro.ler, Raman spectroscopy (RS), photore.ectance (PR) and photocurrent (PC) spectroscopies. Technology oft hick GaN layers grown on sapphire by HVPE is very promising as a part off reestanding GaN substrates manufacturing. Further works will be focused on the optimisation of growth, separating layers from substrates and surface polishing. The in.uence oft he growth parameters on the properties of( Ga, Al)N/Al2O3 and Mg dopant incorporation was studied.