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Abstract

Raman spectrometers are devices which enable fast and non-contact identification of examined chemicals. These devices utilize the Raman phenomenon to identify unknown and often illicit chemicals (e.g. drugs, explosives) without the necessity of their preparation. Now, Raman devices can be portable and therefore can be more widely used to improve security at public places. Unfortunately, Raman spectra measurements is a challenge due to noise and interferences present outside the laboratories. The design of a portable Raman spectrometer developed at the Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology is presented. The paper outlines sources of interferences present in Raman spectra measurements and signal processing techniques required to reduce their influence (e.g. background removal, spectra smoothing). Finally, the selected algorithms for automated chemicals classification are presented. The algorithms compare the measured Raman spectra with a reference spectra library to identify the sample. Detection efficiency of these algorithms is discussed and directions of further research are outlined.
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Abstract

Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
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Abstract

Samples of CdTe single crystals which are used as radiation detectors were periodically measured during a long time interval with different values of an applied voltage. The samples were also periodically exposed during long time periods to high temperatures of 390 K and to rapid changes of temperature from 300 K to 390 K. After 1.5 years of measurements we observed ageing of the samples which resulted in deterioration of their transport characteristics. The resistance of the samples increased significantly and current-voltage characteristics were unstable in time. Noise spectroscopy showed that low frequency noise can be used for detection of CdTe sample ageing as its spectral density increases significantly comparing to the 1/f noise of a high quality sample
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Abstract

Noise spectroscopy and I-V characteristic non-linearity measurement were applied as diagnostic tools in order to characterize the volume and contact quality of positive temperature coefficient (PTC) chip sensors and to predict possible contact failure. Correctly made and stable contacts are crucial for proper sensing. I-V characteristics and time dependences of resistance were measured for studied sensors and, besides the samples with stable resistance value, spike type resistance fluctuation was observed for some samples. These spikes often disappear after about 24 hours of voltage application. Linear I-V characteristics were measured for the samples with stable resistance. The resistance fluctuation of burst noise type was observed for some samples showing the I-V characteristic dependent on the electric field orientation. We have found that the thermistors with high quality contacts had a linear I-V characteristic, the noise spectral density is of 1/f type and the third harmonic index is lower than 60 dB. The samples with poor quality contacts show non-linear I-V characteristics and excess noise is given by superposition of g-r and 1/fn type noises, and the third harmonic index is higher than 60 dB.
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