In the last two decades several new concepts of photodetectors to improve their performance have been proposed. New strategies are especially addressed to the group of so called high-operating-temperature detectors where - apart from increasing of operating temperature - both the size and power consumption reduction is expected. In this paper a new strategy in the photo-detector design is presented - the barrier detectors: CnBn; CnBnN+, CpBn and unipolar barrier photodiodes. In spite of considering barrier detectors based on AIIIBV bulk compounds and type-II superlattices as having theoretically a better performance than those based on HgCdTe, the latter compound is also used to fabricate barrier detectors. Among many new applications of barrier detectors the detection of explosives can be extremely important due to an increased threat of terrorist attacks. This paper presents the status of the barrier detectors and compares the performance of mid-wave HgCdTe barrier detectors and unipolar barrier photodiodes.
An active beam-pointing stabilization system has been developed for a high-power KrF laser system to eliminate the long-term drift of the directional change of the beam in order to have a stable focusing to a high intensity. The control of the beam direction was achieved by a motor-driven mirror activated by an electric signal obtained by monitoring the position of the focus of the output beam. Instead of large sized UV-sensitive position sensitive detectors a simple arrangement with scatter plates and photodiodes are used to measure the directionality of the beam. After the beam stabilization the long-term residual deviation of the laser shots is ~14 μrad, which is comparable to the shot-to-shot variation of the beam (~12 μrad). This deviation is small enough to keep the focal spot size in a micrometer range when tightly focusing the beam using off-axis parabolic mirrors.
The paper presents a study of the performance of some selected UV detectors. Unlike many similar works, the obtained data refer to commercial photodiodes (not only to detector materials). The main task of the research was to determine the influence of the operating temperature and annealing on the detector spectral responsiveness. A comparison of the results obtained for the photodiodes made of GaN and SiC was also performed. Although both kinds of detectors can work at high temperatures for a long time, some modification of their properties was observed. However, for GaN and SiC photodiodes, this modification has a substantially different nature. It is very important for some applications, e.g. fire alarms and a military equipment.