In this work synthesis, sintering processes and properties of three groups of perovskite-type ceramics utilized in chosen electronic applications are briefly described. The first group includes high permittivity dielectrics based on relaxor ferroelectrics and new leadfree ceramics, destined for bulk and thick film capacitors. The second group comprises ceramics for low and high temperature thermistors and the third one nonstoichiometric conducting compounds containing doped SrMnO3 and SrCoO3, tested as electrode materials for solid state cells.
A novel design of a circuit used for NTC thermistor linearization is proposed. The novelty of the proposed design consists in a specific combination of two linearization circuits, a serial-parallel resistive voltage divider and a two-stage piecewise linear analog-to-digital converter. At the output of the first linearization circuit the quasi-linear voltage is obtained. To remove the residual voltage nonlinearity, the second linearization circuit, i.e., a two-stage piecewise linear analog-to-digital converter is employed. This circuit is composed of two flash analog-to-digital converters. The first analog-to-digital converter is piecewise linear and it is actually performing the linearization, while the second analog-to-digital converter is linear and it is performing the reduction of the quantization error introduced by the first converter. After the linearization is performed, the maximal absolute value of a difference between the measured and real temperatures is 0.014°C for the temperature range between −25 and 75°C, and 0.001°C for the temperature range between 10 and 40°C.
This paper presents the concept and modern technological approach to the fabrication of discrete, integrated and integral micropassives. The role of these components in modern electronic circuits is discussed too. The material, technological and constructional solutions and their relation with electrical and stability properties are analyzed in details for linear and nonlinear microresistors made and characterized at the Faculty of Microsystem Technology, Wrocław University of Technology.