In this study, an analysis of the optical performance of two types of distributed Bragg reflector structures based on GaAs and InP material systems was carried out. The structures were designed for maximum performance at 4 µm with their reflectivity achieving between 80 and 90% with eight pairs of constituent layers. To further enhance the performance of these structures, additional Au layers were added at the bottom of the structure with Ti pre-coating applied to improve the adhesivity of the Au to the semiconductor substrate. The optimal range of Ti layer thickness resulting in the improvement of the maximum reflectivity was determined to be in between 5 and 15 nm.