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Abstract

Indium gallium zinc oxide (In–Ga–Zn–O) thin films, which are transparent conductive films for liquid crystals and electroluminescent displays, were fabricated via singlestep sputter deposition using one target containing different proportions of indium oxide, gallium oxide, and zinc oxide powders. Experimental results suggest that the In–Ga–Zn–O thin films can be prepared using the method of single-step radio frequency (RF) sputter deposition, applying a powder target containing indium oxide, gallium oxide, and zinc oxide. The In–Ga–Zn–O thin films were prepared on Si substrates, and the deposition rate depended on the target composition. In these plasma processes, electron density and temperature were essentially independent of target composition. The prepared films were very smooth with a root-mean-square roughness of less than 10 nm. The crystallinity of the ZnO peak was observed in all the films; whereas the In and Ga peaks were not observed in the films prepared. The X-ray photoelectron spectroscopy of the films also revealed that the elemental concentration ratio of In–Ga–Zn–O thin films could be prepared using one target, and that can be easily controlled by ratios in the In 2O 3/Ga 2O 3/ZnO composition in the powder target. The transmittances were > 75% at 800 nm for all the target mixtures, and increased with increasing In 2O 3 in the powder target.
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Authors and Affiliations

Takahiko Satake
1
ORCID: ORCID
Hiroharu Kawasaki
2
Shin-Ichi Aoqiu
1

  1. Graduate School of Engineering Sojo University, Ikeda Nishi-ku Kumamoto City, Japan
  2. Department of Electrical and Electronic Engineering, National Institute of Technology, Sasebo College, Okishin-machi, Sasebo City, Nagasaki Pref., Japan
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Abstract

In this study, different amounts of tantalum carbide (TaC) powders (5, 10 and 15 wt.%) are added to Vanadis 4 Extra steel powders. The composite powders are sintered at 1260, 1280, 1300, 1320, 1340 and 1360°C for 1 h, respectively. The experimental results showed that good mechanical properties (hardness 79.7 HRA, TRS 2246 MPa) were obtained by the addition of 10% TaC sintered at 1320°C for 1 h. Furthermore, the optimal sintered V4ES/TaC (Vanadis 4 Extra steel / TaC) composites after sub-zero treatment possess the highest hardness (80.9 HRA) and transverse rupture strength (TRS) values (2445 MPa), as well as a better polarization resistance (658.99 Ω·cm2). After sub-zero treatment, the VC carbides decompose and re-precipitate refined VC carbides within the grains (VC carbides are formed in steel powder); moreover, the TaC particles are still uniformly distributed around the grain boundaries, which results in dispersion strengthening and precipitation hardening. The results clearly reveal that sub-zero heat treatment effectively improves the microstructure and strengthens the V4ES/TaC composite.

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Authors and Affiliations

Kuo-Tsung Huang
ORCID: ORCID
Shih-Hsien Chang
ORCID: ORCID
Chan-Yu Chuang

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