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Number of results: 7
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Abstract

The paper presents verification of a peak detection method cooperating with infrared radiation detector module applications. The work has been divided into parts including SPICE simulations and presentation of results obtained with the constructed prototype. The design of the peak detector dedicated to applications with very short pulses requires a different approach than that for standard solutions. It is mainly caused due to the ratio of pulse width and time period. In the described application this ratio is less than 10%. The paper shows testing of an analogue circuit which is capable to be inserted in these applications.

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Authors and Affiliations

Krzysztof Achtenberg
Janusz Mikołajczyk
Dariusz Szabra
Artur Prokopiuk
Zbigniew Bielecki
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Abstract

The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.
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Bibliography

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  3. Jones, B. Electrical noise as a reliability indicator in electronic devices and components. IEE Proc. G 149, 13–22 (2002). https://doi.org/10.1049/ip-cds:20020331
  4. Dyakonova, N., Karandashev, S. , Levinshtein, M .E., Matveev, B. A. & Remennyi, M. A. Low frequency noise in p-InAsSbP / n-InAs infrared photodiodes. Semicond. Sci. Technol. 33, 065016 (2018). https://doi.org/10.1088/1361-6641/aac15d
  5. Ciura, L., Kolek, A., Michalczewski, K., Hackiewicz, K. & Martyniuk, P. 1/f noise in InAs/InAsSb superlattice photoconductors. IEEE Trans. Electron Devices. 67, 3205–3210 (2020). https://doi.org/10.1109/TED.2020.2998449
  6. Savich, G. , Pedrazzani, J. R., Sidor, D. E., Maimon, S. & Wicks, G. W. Dark current filtering in unipolar barrier infrared detectors. Appl. Phys. Lett. 99, 121112 (2011). https://doi.org/10.1063/1.3643515
  7. Cervera, C. et al. Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain. Electron. Mater. 41, 2714–2718 (2012). https://doi.org/10.1007/s11664-012-2035-4
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    461–472 (2014). https://doi.org/10.2478/mms-2014-0039
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  14. Taalat, R., Christol, P. & Rodriguez, J. Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain. Electron. Mater. 41, 2714–2718 (2012). https://doi.org/10.1007/s11664-012-2035-4
  15. Ramos, D. et al. 1/f noise and dark current correlation in midwave InAs/GaSb Type-II superlattice IR detectors. Status Solidi A. 218, 2000557 (2020). https://doi.org/10.1002/pssa.202000557
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Authors and Affiliations

Krzysztof Achtenberg 
1
ORCID: ORCID
Janusz Mikołajczyk
1
ORCID: ORCID
Zbigniew Bielecki
1
ORCID: ORCID

  1. Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
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Abstract

The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp transimpedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√ Hz, 3 nV/√ Hz, 0.95 nV/√Hz and 0.6 nV/√ Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A −3 dB frequency response is from ∼ 20 mHz to ∼ 600 kHz.

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Authors and Affiliations

Krzysztof Achtenberg
ORCID: ORCID
Janusz Mikołajczyk
ORCID: ORCID
Zbigniew Bielecki
ORCID: ORCID
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Abstract

Infrared detectors are usually characterized by 1/f noise when operating with biasing. This type of noise significantly reduces detection capabilities for low-level and slow signals. There are a few methods to reduce the influence of 1/f noise, like filtering or chopper stabilization with lock-in. Using the first one, a simple 1st-order analog low-pass filter built-in amplifier usually cuts off 1/f noise fluctuations at low frequencies. In comparison, the stabilization technique modulates the signal transposing to a higher frequency with no 1/f noise and then demodulates it back (lock-in amplifiers). However, the flexible tuned device, which can work precisely at low frequencies, is especially desirable in some applications, e.g., optical spectroscopy or interferometry. The paper describes a proof-of-concept of an IR detection module with an adjustable digital filter taking advantage of finite impulse response type. It is based on the high-resolution analog-to-digital converter, field-programmable gate array, and digital-to-analog converter. A microcontroller with an implemented user interface ensures control of such a prepared filtering path. The module is a separate component with the possibility of customization and can be used in experiments or applications in which the reduction of noises and unexpected interferences is needed.
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Authors and Affiliations

Krzysztof Achtenberg
1
ORCID: ORCID
Janusz Mikołajczyk
1
ORCID: ORCID
Zbigniew Bielecki
1
ORCID: ORCID

  1. Institute of Optoelectronics, Military University of Technology, Warsaw, Poland
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Abstract

The paper is a review of analog and digital electronics dedicated to monitor nanosecond pulses. Choosing the optimal peak detector construction depends on many factors for example precision, complexity, or costs. The work shows some virtues and limitations of selected peak detection methods, for example standard peak detector with rectifier, sample and hold circuit with triggering units and ADC fast acquisition. However, the main attention is paid to problems of results from effective triggering signal for sample and hold operation. The obtained results allow for designing a peak detector construction as an alternative for costly and very complex fast acquisition systems based on ADC and FPGA technologies.

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Authors and Affiliations

Krzysztof Achtenberg
ORCID: ORCID
Janusz Mikołajczyk
ORCID: ORCID
Dariusz Szabra
Artur Prokopiuk
Zbigniew Bielecki
ORCID: ORCID
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Abstract

This paper presents some construction analysis and test results of a Free Space Optics system operating at the wavelength of 9.35 μm. In the system, a quantum cascade laser and a photoreceiver with mercury cadmium telluride photodetectors were used. The main parameters of these elements were discussed taking into account a data link operation. It also provides to determine a data range for various weather conditions related to scattering and scintillation. The results of numerical analyses defined the properties of currently available FSO technologies working in the near infrared or in the short infrared range of spectrum versus the performances of the developed system. The operation of this system was verified in three different test environments. The obtained results may also contain important issues related to the practical application of any FSO system.

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Authors and Affiliations

Janusz Mikolajczyk
Dariusz Szabra
Artur Prokopiuk
Krzysztof Achtenberg
ORCID: ORCID
Jacek Wojtas
ORCID: ORCID
Zbigniew Bielecki
ORCID: ORCID
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Abstract

The review includes results of analyses and research aimed at standardizing the concepts and measurement procedures associated with photodetector parameters. Photodetectors are key components that ensure the conversion of incoming optical radiation into an electrical signal in a wide variety of sophisticated optoelectronic systems and everyday devices, such as smartwatches and systems that measure the composition of the Martian atmosphere. Semiconductor detectors are presented, and they play a major role due to their excellent optical and electrical parameters as well as physical parameters, stability, and long mean time to failure. As their performance depends on the manufacturing technology and internal architecture, different types of photodetectors are described first. The following parts of the article concern metrological aspects related to their characterization. All the basic parameters have been defined, which are useful both for their users and their developers. This allows for the verification of photodetectors’ workmanship quality, the capabilities of a given technology, and, above all, suitability for a specific application and the performance of the final optoelectronic system. Experimentally validated meteorological models and equivalent diagrams, which are necessary for the correct analysis of parameter measurements, are also presented. The current state of knowledge presented in recognized scientific papers and the results of the authors’ works are described as well.
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Authors and Affiliations

Zbigniew Bielecki
1
ORCID: ORCID
Krzysztof Achtenberg
1
ORCID: ORCID
Małgorzata Kopytko
2
ORCID: ORCID
Janusz Mikołajczyk
1
ORCID: ORCID
Jacek Wojtas
1
ORCID: ORCID
Antoni Rogalski
2
ORCID: ORCID

  1. Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
  2. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

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