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Abstract

The effect of aging time at 850°C for 300 s, 600 s, 1800 s, and 84600 s on the microstructural evolution and corrosion resistance of 2205 duplex stainless steel (DSS) was studied after cold rolling up to 60% of reduction. X-ray diffraction, scanning electron and transmission electron microscopy were used for microstructural characterization. The corrosion behavior was studied by cyclic potentiodynamic polarization (CPP) and electrochemical impedance technique (EIS) in 3.5% NaCl solution and the susceptibility to sensitization was investigated through the double loop electrochemical potentiodynamic reactivation (DL-EPR) test in 0.5 M H2SO4 + 0.1 M NaCl + 0.002 M KSCN solution. After cold working, increasing aging time led to an increase in sigma phase precipitation and a decrease in pitting corrosion resistance. However, the ultrafine microstructure had a beneficial influence on the self-healing effect in Cr and Mo depleted areas with the increasing of aging time, resulting in higher passivation ability. The DSS 2205 type was not susceptible to intergranular corrosion for the aged conditions applied.
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Authors and Affiliations

R.F. Assumpção
1
ORCID: ORCID
J.C. Fortes Monteiro
2
ORCID: ORCID
V.C. Campideli
2
ORCID: ORCID
D.B. Santos
1
ORCID: ORCID
D.C. Sicupira
2
ORCID: ORCID

  1. Universidade Federal de Minas Gerais, Department of Metallurgical and Materials Engineering, Belo Horizonte, Brazil
  2. Universidade Federal de Ouro Preto, Department of Chemistry, Campus Morro do Cruzeiro, Brazil
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Abstract

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

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Authors and Affiliations

N. Dyakonova
D.B. But
D. Coquillat
W. Knap
C. Drexler
P. Olbrich
J. Karch
M. Schafberger
S.D. Ganichev
G. Ducournau
C. Gaquiere
M.A. Poisson
S. Delage
G. Cywinski
C. Skierbiszewski

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