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Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers

Dominika Dąbrówka Robert P. Sarzała Michał Wasiak Anna Kafar Piotr Perlin Kiran Saba
Opto-Electronics Review | 2022 | 30 | 4 | e144115 | DOI: 10.24425/opelre.2022.144115
Keywords GaN diode laser array with surface light emission thermal analysis
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Abstract

This paper presents the results of a thermal computational analysis of a two-dimensional laser array emitting from a surface. The array consisted of eight equispaced ridge-waveguide edge-emitting nitride diode lasers. Surface emission of light was obtained using mirrors inclined at 45°. The authors investigate how the geometrical dimensions of the array emitters and their pitch in the array affect the increase and distribution of temperature in the device. They also examine the influence on the temperature increase and distribution of the thickness of the insulating SiO2, the thickness of the gold layer forming the top contact of the laser, and the thickness of the GaN substrate, as well as the influence of the ridge-waveguide width.
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Bibliography

  1. Warren, M. E. et al. High-speed and scalable high-power VCSEL arrays and their applications. SPIE 9381, (2015). https://doi.org/10.1117/12.2080235
  2. Huang, C. Y. Challenges and advancement of blue III-Nitride vertical-cavity surface-emitting lasers. Micromachines 12, 676 (2021). https://doi.org/10.3390/mi12060676
  3. Kuramoto, M. et al. High-power GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors. Sci. 9, 416 (2019). https://doi.org/10.3390/app9030416
  4. Kuramoto, M. et al.Watt-class blue vertical-cavity surface-emitting laser arrays. Phys. Express 12, 091004 (2019). https://doi.org/10.7567/1882-0786/ab3aa6
  5. Liu, J. et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photon. Technol. Lett. 29, 2203–2206 (2017). https://doi.org/10.1109/LPT.2017.2770169
  6. Perlin, P. et al. InGaN laser diode mini-arrays. Phys. Express 4, 062103 (2011). https://doi.org/10.1143/apex.4.062103
  7. Springthorpe, A. J. A novel double-heterostructure p-n junction Appl. Phys. Lett. 31, 524 (1977). https://doi.org/10.1063/1.89762
  8. Donnelly, J. P., Rauschenbach, K., Wang, C. A., Goodhue, W. D. & Bailey, R. J. Two-dimensional surface-emitting arrays of GaAs/AlgaAs diode lasers. SPIE 1043, Laser Diode Techno-logy and Applications (1989). https://doi.org/10.1117/12.976359
  9. Kim, J. H., Lang, R. J. & Larsson A. High‐power AlGaAs/GaAs single quantum well surface‐emitting lasers with integrated 45° beam deflectors. Phys. Lett. 57, 2048–2050 (1990). https://doi.org/10.1063/1.103937
  10. Śpiewak, P. et al. Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser bars. Sci. Technol. 32, 025008 (2017).
    https://doi.org/10.1088/1361-6641/aa513b
  11. Shackelford, J. F. & Alexander, W. CRC Materials Science and Engineering Handbook, Third Edition. (CRC Press, 2001).
    https://doi.org/10.1201/9781420038408
  12. Lide, D. R. CRC handbook of chemistry and physics: a ready-reference of chemical and physical data, 85th edition. Am. Chem. Soc. 127, 4542 (2004). https://doi.org/10.1021/ja041017a
  13. Kuc, M. & Sarzała, R. P. Modelowanie zjawisk fizycznych w krawędziowych laserach azotkowych oraz ich matrycach. (Wydawnictwo Politechniki Łódzkiej, 2016). [in Polish]
  14. Nakwaski, W. Thermal conductivity of binary, ternary, and quaternary III–V compounds. Appl/ Phys. 64, 159‒166 (1988). https://doi.org/10.1063/1.341449
  15. Sarzała, R. P., Śpiewak, P., Nakwaski, W. & Wasiak, M. Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures. Laser Technol. 132, 106482 (2020). https://doi.org/10.1016/j.optlastec.2020.106482
  16. Karbownik, P. & Sarzała, R. Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers. Opto-Electron. Rev. 16, 27–33 (2008).
    https://doi.org/10.2478/s11772-007-0035-3
  17. Tomczyk, A., Sarzała, R. P., Czyszanowski, T., Wasiak, M. & Nakwaski, W. Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers. Opto-Electron. Rev. 11, 65–75 (2003). https://www.infona.pl/resource/bwmeta1.element.baztech-article-BWA1-0002-0110
  18. Chung, D. D. L. Thermal interface materials. J. Mater. Eng. Perform. 10, 56–59 (2001). https://doi.org/10.1361/105994901770345358
  19. Khounsary, A. M., Chojnowski, D., Assoufid, L. & Worek, W. M. Thermal contact resistance across a copper-silicon interface. SPIE 3151, 45–51 (1997). https://doi.org/10.1117/12.294497
  20. Wengang, W. B., Haochung, H. K., Peicheng, K. & Shen, B. Handbook of GaN Semiconductor. 1st edition (CRC Press, 2017). https://doi.org/10.1201/9781315152011
  21. Adachi, A. Properties of Semiconductor Alloys: Group‐IV, III–V and II–VI Semiconductors. (John Wiley & Sons, Ltd., 2009). https://doi.org/10.1002/9780470744383
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Authors and Affiliations

Dominika Dąbrówka
1
ORCID: ORCID
Robert P. Sarzała
1
ORCID: ORCID
Michał Wasiak
1
ORCID: ORCID
Anna Kafar
2
ORCID: ORCID
Piotr Perlin
2
ORCID: ORCID
Kiran Saba
2
ORCID: ORCID
  1. Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland
  2. Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland

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