Abstract
In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of
two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature
and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to
surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier
lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of
350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
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