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Abstract

Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
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Authors and Affiliations

Magdalena Latkowska
Wojciech Dawidowski
Beata Ściana
Iwona Zborowska-Lindert
Miroslav Mikolášek
Damian Radziewicz
Damian Pucicki
Katarzyna Bielak
Mikołaj Badura
Jaroslav Kováč
Marek Tłaczała

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