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Abstract

The paper presents experimental results of the lifetime of light induced excess carriers in the n-type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.

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Authors and Affiliations

L. Bychto
M. Maliński
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Abstract

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In2S3 thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.

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Authors and Affiliations

L. Bychto
M. Maliński
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Abstract

Results of the ab initio molecular dynamics calculations of silicon crystals are presented by means of analysis of the velocity autocorrelation function and determination of mean phonon relaxation time. The mean phonon relaxation time is crucial for prediction of the phonon-associated coefficient of thermal conductivity of materials. A clear correlation between the velocity autocorrelation function relaxation time and the coefficient of thermal diffusivity has been found. The analysis of the results obtained has indicated a decrease of the velocity autocorrelation function relaxation time t with increase of temperature. The method proposed may be used to estimate the coefficient of ther-mal diffusivity and thermal conductivity of the materials based on silicon and of other wide-bandgap semiconductors. The correlation between kinetic energy fluctuations and relaxation time of the velocity autocorrelation function has been calculated with the relatively high coefficient of determination R2 = 0.9396. The correlation obtained and the corresponding approach substantiate the use of kinetic energy fluctuations for the calculation of values related to heat conductivity in silicon-based semiconductors (coefficients of thermal conductivity and diffusivity).

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Authors and Affiliations

B. Andriyevsky
M. Maliński
Ł. Buryło
V.Y. Stadnyk
M.O. Romanyuk
J. Piekarski
L. Andriyevska

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