The aim of this article is to present the results of research aimed at confirmation whether it is possible to form an intermediate band in GaAs implantation with H+ ions. The obtained results were discussed with particular emphasis on possible applications in the photovoltaic industry. As it is commonly known, the idea of intermediate band solar cells reveals considerable potential as the most fundamental principle of the next generation of semiconductors solar cells. In progress of the research, a series of GaAs samples were subjected to poly-energy implantation of H+ ions, followed by high-temperature annealing. Tests were conducted using thermal admittance spectroscopy, under conditions of variable ambient temperature, measuring signal frequency in order to localize deep energy levels, introduced by ion implantation. Activation energy ΔE was determined for additional energy levels resulting from the implantation of H+ ions. The method of determining the activation energy value is shown in Fig. 2 and the values read from it are σ0 = 10−9 (Ω·cm)−1 for 1000/T0 = 3.75 K−1 and σ1 = 1.34 × 10−4 (Ω·cm)−1 for 1000/T1 = 2.0 K−1. As a result, we obtain ΔE ≈ 0:58 eV. It was possible to identify a single deep level in the sample of GaAs implanted with H+ ions. Subsequently, its location in the band gap was determined by estimating the value of ΔE. However, in order to confirm whether the intermediate band was actually formed, it is necessary to perform further analyses. In particular, it is necessary to implement a new analytical model, which takes into consideration the phenomena associated with the thermally activated mechanisms of carrier transport as it was described in [13]. Moreover, the influence of certain parameters of ion implantation, post-implantation treatment and testing conditions should also be considered.
The article presents the assumptions, characteristics and description of the implementation of a pilot system for on-line monitoring of partial discharges in heads of the high-voltage cable lines. The main purpose of the implementation was to increase the reliability of cable line heads by equipping them with a system of continuous assessment of technical condition with direct transmission of measurement data and alarms to the SCADA system. In order to achieve the assumed goal, unconventional methods for measuring partial discharges were used, the application of which does not require disconnecting the line from the voltage. The implementation was carried out on an active 110 kV high voltage cable line in the area of activity of one of the Distribution System Operators.
The article presents methodology for testing the electric strength of vacuum chambers designed for modern medium voltage switchgear developed by the authors, using two innovative test stands designed and constructed by the research team above. Verification of the correctness of operation of the test stands, as well as the validity of the developed methodology was carried out by performing a series of tests. It was determined that below certain pressure values in the tested chamber (from about 5.0×10 0 Pa for station 1 and for about 4.0×10 -1 Pa for station 2), the electric strength maintains a constant value, which guarantees stable operation of the vacuum chamber. The values of the total measurement uncertainty for the electric strength tests were also estimated.