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Abstract

A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.

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Authors and Affiliations

Andrzej Kowalewski
Jarosław Wróbel
Jacek Boguski
Kinga Gorczyca
Piotr Martyniuk
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Abstract

Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 µm thick layer of indium arsenide on a semi-insulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20–300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.
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Authors and Affiliations

Jarosław Wróbel
1
ORCID: ORCID
Gilberto A. Umana-Membreno
2
ORCID: ORCID
Jacek Boguski
1
ORCID: ORCID
Sebastian Złotnik
1
ORCID: ORCID
Andrzej Kowalewski
1
ORCID: ORCID
Paweł Moszczyński
3
ORCID: ORCID
Jarek Antoszewski
2
ORCID: ORCID
Lorenzo Faraone
2
Jerzy Wróbel
1 4
ORCID: ORCID

  1.  Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  2. Dept. of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley WA 6009, Australia
  3. Faculty of Cybernetics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  4. Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
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Abstract

The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and high-resolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.
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Authors and Affiliations

Jacek Boguski
1
ORCID: ORCID
Jarosław Wróbel
1
ORCID: ORCID
Sebastian Złotnik
1
ORCID: ORCID
Bogusław Budner
2
Malwina Liszewska
2
Łukasz Kubiszyn
3
ORCID: ORCID
Paweł P. Michałowski
2
Łukasz Ciura
4
Paweł Moszczyński
5
ORCID: ORCID
Sebastian Odrzywolski
1
Bartłomiej Jankiewicz
2
Jerzy Wróbel
1 6
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  2. Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  3. VIGO Photonics S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
  4. Department of Electronics Fundamentals, Rzeszów University of Technology, W. Pola 12, 35-959 Rzeszów, Poland
  5. Institute of Computer and Information Systems, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  6. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

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