Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ∼60 Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In_0.29Ga_0.71As_0.99N_0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ∼60 Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ∼2 × 10¹⁸cm⁻³ the optical gain of the nano-heterostructure is of 2100 cm⁻¹ at the wavelength is of 1.30 μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30 μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In₂S₃ thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.

Transparent Conductive Electrode (TCE) is an essential part of the optoelectronic and display devices such as Liquid Crystal Displays (LCDs), Solar Cells, Light Emitting Diodes (LEDs), Organic Light Emitting Diodes (OLEDs) and touch screens. Indium Tin Oxide (ITO) is a commonly used TCE in these devices because of its high transparency and low sheet resistance. However, scarcity of indium and brittle nature of ITO limit its use in future flexible electronics. In order to develop flexible optoelectronic devices with improved performance, there is a requirement of replacing the ITO with a better alternate TCE. In this work, several alternative TCEs including transparent conductive oxides, carbon nanotubes, conducting polymers, metal nanowires, graphene and composites of these materials are studied with their properties such as sheet resistance, transparency and flexibility. The advantage and current challenges of these materials are also presented in this work.