Modern scintillator detectors act as an efficient tool for detection and measurement of ionizing radiations. ZnSe based materials have been found to be a promising candidate for scintillation applications. These scintillators show much-needed scintillation efficiency along with advantages such as high thermal and radiation stability, less-toxicity, non-hygroscopicity, emissions in the visible range and small decay time etc. Further, in quantum confinement regime, they show improvement in luminescent properties and size dependent emissions. In this review article, the attempt has been made to trace the progress of ZnSe based materials towards highly efficient quantum dot scintillators. Here, the fundamental process of scintillation has been explained. Factors such as doping, annealing, heavy ion irradiation which affects the scintillation response of ZnSe based scintillators have also been discussed. Method of synthesis plays a key role in optimization of quantum dot properties. Hence, it has been tried to trace the development in methods of synthesis of quantum dots. With optimized synthesis, we can extend applications of these highly efficient quantum dot scintillators for various scientific and industrial applications.

In article a two-dimensional photonic crystal (PhC) is considered and modelled as a new generation antireflection coating for optoelectronic devices. Traditional antireflective coatings (ARCs) reduce the reflection of the radiation only – the new generation of antireflective coatings should affect the distribution of the radiation also. Such functionality can be provided by the two-dimensional PhC which reduce the reflection and scatter transmitted light. Prior to the fabrication, the PhCs should be designed and analysed. Results of the analysis should provide quantitative means for choice of materials and design solutions. In work, we analyse the electromagnetic field distribution as Poynting vectors inside the materials of optoelectronic devices, in order to investigate the possibility of improving the construction of future optoelectronic devices. Furthermore, we calculate the reflection and transmission of that ARC. It’s a complex optic analysis of new generation of ARC. The numerical analysis has been performed with the FDTD method in Lumerical Software. In work, we consider the two-dimensional photonic crystal on the top surface of optoelectronic structures. We compared the results with the traditional ARC from these same parameters as PhC: thickness and material. As an example, we presented the application of modelled, photonic crystal, thin-film, GaAs solar cells with PhC on top. The efficiency of this solar cell, using the photonic crystal, was improved by 6.3% over the efficiency of this same solar cell without PhC. Thus, our research strongly suggests that the unique properties of the photonic crystal could be used as a new generation of ARC.

One dimension solar cells simulator package (SCAPS) is used to study the possibility of carrying out thin CIGS solar cells with high and stable efficiency. In the first step, we modified the conventional ZnO:B/i-ZnO/CdS/SDL/CIGS/Mo structure by substituting the SDL layer with the P + layer, having a wide bandgap from 1 to l.12 eV. Then, we simulated the J-V characteristics of this new structure and showed how the electrical parameters are affected. Conversion efficiency of 18.46% is founded by using 1.1 μm of P + layer thickness. Secondly, we analyze the effect of increase thickness and doping density of CIGS, CdS and P +  layers on the electric parameters of this new structure. We show that only the short-circuit current density (JSC) and efficiency are improved, reaching respectively 34.68 mA/cm² and 18.85%, with increasing of the acceptors density. Finally, we introduced 10 nm of various electron reflectors at the CIGS/Mo interface in the new structure to reduce the recombination of minority carriers at the back contact. High conversion efficiency of 23.34% and better stability are obtained when wide band-gap BSF is used.