Abstract
The paper presents a study of the performance of some selected UV
detectors. Unlike many similar works, the obtained data refer to
commercial photodiodes (not only to detector materials). The main task of
the research was to determine the influence of the operating temperature
and annealing on the detector spectral responsiveness. A comparison of the
results obtained for the photodiodes made of GaN and SiC was also
performed. Although both kinds of detectors can work at high temperatures
for a long time, some modification of their properties was observed.
However, for GaN and SiC photodiodes, this modification has a
substantially different nature. It is very important for some
applications, e.g. fire alarms and a military equipment.
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