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Number of results: 7
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Abstract

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards (110). The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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Authors and Affiliations

D. Benyahia
Łukasz Kubiszyn
ORCID: ORCID
Krystian Michalczewski
ORCID: ORCID
A. Kębłowski
Piotr Martyniuk
ORCID: ORCID
J. Piotrowski
A. Rogalski
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Abstract

The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
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Bibliography

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Authors and Affiliations

Marcin Gębski
1
ORCID: ORCID
Patrycja Śpiewak
1
ORCID: ORCID
Walery Kołkowski
2
Iwona Pasternak
2
Weronika Głowadzka
1
Włodzimierz Nakwaski
1
Robert P. Sarzała
1
ORCID: ORCID
Michał Wasiak
1
ORCID: ORCID
Tomasz Czyszanowski
1
Włodzimierz Strupiński
2

  1. Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczańska 219, 90-924 Łódź
  2. Vigo System S.A., ul. Poznańska 129/133, 05-850 Ożarów Mazowiecki
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Abstract

In this study, an analysis of the optical performance of two types of distributed Bragg reflector structures based on GaAs and InP material systems was carried out. The structures were designed for maximum performance at 4 µm with their reflectivity achieving between 80 and 90% with eight pairs of constituent layers. To further enhance the performance of these structures, additional Au layers were added at the bottom of the structure with Ti pre-coating applied to improve the adhesivity of the Au to the semiconductor substrate. The optimal range of Ti layer thickness resulting in the improvement of the maximum reflectivity was determined to be in between 5 and 15 nm.
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Authors and Affiliations

Monika Mikulicz
1
ORCID: ORCID
Mikołaj Badura
2
ORCID: ORCID
Michał Rygała
1
ORCID: ORCID
Tristan Smołka
1
ORCID: ORCID
Wojciech Macherzyński
2
ORCID: ORCID
Adriana Łozińska
2
ORCID: ORCID
Marcin Motyka
1
ORCID: ORCID

  1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  2. Department of Microelectronics and Nanotechnology, Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland
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Abstract

Experimental methods are presented for determining the thermal resistance of vertical-cavity surfaceemitting lasers (VCSELs) and the lateral electrical conductivity of their p-type semiconductor layers. A VCSEL structure was manufactured from III-As compounds on a gallium arsenide substrate. Conductivity was determined using transmission line measurement (TLM). Electrical and thermal parameters were determined for various ambient temperatures. The results could be used for computer analysis of VCSELs. Keywords: TLM, thermal resistance, VCSEL, AlGaAs.
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Authors and Affiliations

Patrycja Śpiewak
1
ORCID: ORCID
Marcin Gębski
1
ORCID: ORCID
Włodek Strupiński
2 3
Tomasz Czyszanowski
1
Walery Kołkowski
2
Iwona Pasternak
2 3
Robert P. Sarzała
1
ORCID: ORCID
Włodzimierz Nakwaski
1
Włodzimierz Wasiak
1

  1. Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczanska 219, 90-924 Łódz, Poland
  2. Vigo Photonics S.A., ul. Poznanska 129/133, 05-850 Ozarów Mazowiecki, Poland
  3. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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Abstract

Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ∼60 Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In0.29Ga0.71As0.99N0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ∼60 Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ∼2 × 1018cm−3 the optical gain of the nano-heterostructure is of 2100 cm−1 at the wavelength is of 1.30 μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30 μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.

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Authors and Affiliations

K. Sandhya
G. Bhardwaj
R. Dolia
P. Lal
S. Kumar
S. Dalela
F. Rahman
P.A. Alvi
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Abstract

The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×1019 cm–3 and 1×1020 cm–3 for lasers working at 9 μm and 5 μm, respectively. The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact layers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a distinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of –240 ÷ –780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.

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Authors and Affiliations

B. Ściana
M. Badura
W. Dawidowski
K. Bielak
D. Radziewicz
D. Pucicki
A. Szyszka
K. Żelazna
M. Tłaczała
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Abstract

The design and performance analysis of a 1310/1550-nm wavelength division demultiplexer with tapered geometry based on InP/InGaAsP multimode interference (MMI) coupler has been carried out. Wavelength response of demultiplexer of conventional MMI and tapered input and tapered output (tapered I/O) waveguides geometry of the MMI have been discussed. The demultiplexing function has been first performed by choosing a suitable refractive index of the guiding region and geometrical parameters such as the width and length of MMI structure have been achieved. Access width of tapered I/O waveguides have been adjusted to give a low insertion loss (IL) and high extinction ratio (ER) for the considered wavelengths of 1310 nm and 1550 nm. The total size of the demultiplexer has been significantly reduced over the existing MMI devices. Numerical simulations with finite difference beam propagation method are applied to design and optimize the operation of the proposed demultiplexer.

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Authors and Affiliations

D. Chack
V. Kumar
S.K. Raghuwanshi

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