DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diodetransistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
The present paper describes a new architecture of a high-voltage solid-state pulse generator. This generator combines the two types of energy storage systems: inductive and capacitive, and consequently operates two types of switches: opening and closing. For the opening switch, an isolated gate bipolar transistor (IGBT) was chosen due to its interesting characteristics in terms of controllability and robustness. For the closing switch, two solutions were tested: spark-gap (SG) for a powerful low-cost solution and avalanche mode bipolar junction transistor (BJT) for a fully semiconductor structure. The new architecture has several advantages: simple structure and driving system, high and stable controllable repetition rate that can reach 1 kHz, short rising time of a few nanoseconds, high gain and efficiency, and low cost. The paper starts with the mathematical analysis of the generator operation followed by numerical simulation of the device. Finally add a comma the results were confirmed by the experimental test with a prototype generator. Additionally, a comparative study was carried out for the classical SG versus the avalanche mode BJT working as a closing switch.
The paper presents an overview of a method of nanosecond-scale high voltage pulse generation using magnetic compression circuits. High voltage (up to 18 kV) short pulses (up to 1.4 μs) were used for Pulsed Corona Discharge generation. In addition, the control signal of parallel connection of IGBT and MOSFET power transistor influence on system losses is discussed. For a given system topology, an influence of core losses on overall pulse generator efficiency is analysed.