In this topic review the results of the X-band electron paramagnetic resonance (EPR) measurements of Mn, Co, Cr, Fe ions in YAlO₃ (YAP) crystals and Fe ions in LiNbO₃ (LNO) crystals and of chromium doped Bi₁₂GeO₂₀ (BGO) and Ca₄GdO(BO₃)₃ single crystals, are presented. It is well known that the oxide crystals (for example:YAP, LNO, BGO) are one of the most widely used host materials for different optoelectronic applications. The nature of point defect of impurities and produced in the oxide crystal after irradiation by bismuth ions and after irradiation by the ²³⁵U ions with energy 9.47 MeV/u and fluency 5 × 10¹¹ cm⁻¹ is discussed. The latter is important for applications of these oxide crystal as laser materials.