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Abstract

State-of-the-art techniques for growing crystals are yielding materials with unique properties – such as metamaterial behavior or plasmon-enhanced optical performance.
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Authors and Affiliations

Piotr Piotrowski
1

  1. ENSEMBLE Centre of Excellence in WarsawUniversity of Warsaw
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Abstract

In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.
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Authors and Affiliations

Krzysztof Górecki
Paweł Górecki
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Abstract

Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were

grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were

fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the

order of Jth ≈ 280 A/cm2 (for the resonator length L = 700 um) and differential efficiency η= 0.40 W/A (41%) from one

mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations

of above parameters, obtained by numerical modelling of devices were Jth ≈ 210 A/cm and η = 0.47 W/A from one mirror,

respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation

after 1500 hrs of CW operation at 35oC heat sink temperature at the constant optical power (50 mW) conditions.

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Authors and Affiliations

M. Bugajski
B. Mroziewicz
K. Regiński
J. Muszalski
K. Kosiel
M. Zbroszczyk
T. Ochalski
T. Piwoński
D. Wawer
A. Szerling
E. Kowalczyk
H. Wrzesińska
M. Górska
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Abstract

Two methods for calculating transport parameters in semiconductor superlattices by applying Green’s functions are compared in the paper. For one of the methods, the Wannier functions method, where computations in the complex space and Wannier functions base are required, the Hamiltonian matrix is small in size and its elements depend solely on the energy. For the real space method, as it operates in the floating point domain and uses the Hamiltonian containing the elements dependent both on energy and position, the Hamiltonian matrix is larger in size. The size makes the method computationally challenging. To find the consequences of choosing one of the methods, a direct comparison between the computations, obtained for both methods with the same input parameters, was undertaken. The differences between the results are shown and explained. Selected simulations allowed us to discuss advantages and disadvantages of both methods. The calculations include transport parameters such as the density of states and the occupation functions, with regard to scattering processes where the self-consistent Born approximation was used, as well as the spatial distribution of electron concentration for two superlattices structures. The numerical results are obtained within the non-equilibrium Green’s functions formalism by solving the Dyson and the Keldysh equations.

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Authors and Affiliations

M. Mączka
G. Hałdaś
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Abstract

This paper presents the current state of a photoconductive semiconductor switch engineering. A photoconductive semiconductor switch is an electric switch with its principle of operation based on the phenomenon of photoconductivity. The wide application range, in both low and high-power devices or instruments, makes it necessary to take design requirements into account. This paper presents selected problems in the scope of designing photoconductive switches, taking into account, i.e. issues associated with the element trigger speed, uniform distribution of current density, thermal resistance, operational lifespan, and a high, local electric field generated at the location of electrodes. A review of semiconductor materials used to construct devices of this type was also presented.

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Authors and Affiliations

E. Majda-Zdancewicz
M. Suproniuk
M. Pawłowski
M. Wierzbowski
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Abstract

In the paper the problem of modelling thermal properties of semiconductor devices with the use of compact models is presented. This class of models is defined and their development over the past dozens of years is described. Possibilities of modelling thermal phenomena both in discrete semiconductor devices, monolithic integrated circuits, power modules and selected electronic circuits are presented. The problem of the usefulness range of compact thermal models in the analysis of electronic elements and circuits is discussed on the basis of investigations performed in Gdynia Maritime University.

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Authors and Affiliations

Krzysztof Górecki
Janusz Zarębski
Paweł Górecki
Przemysław Ptak
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Abstract

In the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first) significant coefficient (c0) representing Gaussian noise. If additional coefficients cr (where r > 0) appear it means that RTS noise (two-level as well as multiple-level) is detected. The coefficient representing the Gaussian component always has the highest value of all. The application of this method will be presented on the example of four devices, each with different noise (pure Gaussian noise signal, noise signal with two-level RTS noise, noise signal with three-level RTS noise and noise signal with not precisely visible occurrence of RTS noise).

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Authors and Affiliations

Barbara Stawarz-Graczyk
Dariusz Dokupil
Paweł Flisikowski
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Abstract

Unlike traditional passive filters, modern active filters have the following multiple functions; harmonic filtering, damping, isolation and termination, reactive-power control for power factor correction and voltage regulation, load balancing, voltage-flicker reduction, and/or their combinations. Significant cost reductions in both power semiconductor devices and signal-processing devices have inspired manufactures to put active filters on the market. This paper deals with general pure active filters for power conditioning, and specific hybrid active filters for harmonic filtering of three-phase diode rectifiers, as well as traditional passive filters.

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Authors and Affiliations

H. Akagi
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Abstract

Sensors designed by Polish engineers help detect traces of life beyond Earth. Adam Piotrowski of Vigo System tells us what else these devices can do.

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Authors and Affiliations

Adam Piotrowski
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Abstract

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
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Bibliography

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[5] Górecki, P., & Górecki, K. (2015). The analysis of accuracy of selected methods of measuring the thermal resistance of IGBTs. Metrology and Measurement Systems, 22(3), 455–464. https://doi.org/10.1515/mms-2015-0036
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[8] Matsuura, H., Komeda, M., Kagamihara, S., Iwata, H., Ishihara, R., Hatakeyama, T., Watanabe, T., Kojima, K., Shinohe, T., & Arai, K. (2004). Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H–SiC epilayers. Journal of Applied Physics, 96(5), 2708–2715. https://doi.org/10.1063/1.1775298
[9] Suproniuk, M., Pawłowski, M., Wierzbowski, M., Majda-Zdancewicz, E., & Pawłowski, Ma. (2018). Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation. Review of Scientific Instruments, 89(4). https://doi.org/10.1063/1.5004098
[10] Suproniuk, M., Kaczmarek, W., & Pawlowski, M. (2019). A New Approach to Determine the Spectral Images for Defect Centres in High-Resistive Semiconductor Materials. Proceedings of the 23rd International Conference Electronics 2019, Lithuania. https://doi.org/10.1109/ELECTRONICS.2019.8765694
[11] Piwowarski, K. (2020). Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems. Opto-electronics Review, 28(2), 74–81. https://doi.org/10.24425/opelre.2020.132502
[12] Suproniuk, M. (2020). Effect of generation rate on transient photoconductivity of semi-insulating 4H–SiC. Scientific Reports, 10(1). https://doi.org/10.1038/s41598-020-68898-z
[13] Suproniuk, M., Piwowarski, K., Perka, B., Kaminski, P., Kozlowski, R., & Teodorczyk, M. (2019). Blocking characteristics of photoconductive switches based on semi-insulating GAP and GaN. Elektronika ir Elektrotechnika, 25(4), 36–39. https://doi.org/10.5755/j01.eie.25.4.23968
[14] Sze, S. M.,&Kwok, K. Ng. (2006). Physics of Semiconductor Devices.Wiley. https://doi.org/10.1002/ 0470068329
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[17] Zvanut, M. E., & Konovalov, V. V. (2002). The level position of a deep intrinsic defect in 4H–SiC studied by photoinduced electron parametric resonance. Applied Physics Letters, 80(3), 410–412. https://doi.org/10.1063/1.1432444
[18] Kaminski, P., Kozubal, M., Caldwell, J. D., Kew, K. K., Van Mil, B. L., Myers-Ward, R. L., Eddy, C. R. Jr., & Gaskill, D. K. (2010). Deep-level defects in epitaxial 4H–SiC irradiated with low-energy electrons. Electron Mater, 38(3–4), 26–34.
[19] Danno, K., & Kimoto, T. (2006). Deep hole traps in as-grown 4H–SiC epilayers investigated by deep level transient spectroscopy. Materials Science Forum, 527–529, 501–504. https://doi.org/10.4028/ www.scientific.net/MSF.527-529.501
[20] Kaminski, P., Kozłowski, R., Strzelecka, S., Hruban, A., Jurkiewicz-Wegner, E., & Piersa, M. (2011). High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating GaP. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1361–1365. https://doi.org/10.1002/ pssc.201084009
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Authors and Affiliations

Marek Suproniuk
1

  1. Military University of Technology, Faculty of Electronics, Institute of Electronic Systems, gen. S. Kaliskiego 2, Warsaw
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Abstract

The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
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Bibliography

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Authors and Affiliations

Marcin Gębski
1
ORCID: ORCID
Patrycja Śpiewak
1
ORCID: ORCID
Walery Kołkowski
2
Iwona Pasternak
2
Weronika Głowadzka
1
Włodzimierz Nakwaski
1
Robert P. Sarzała
1
ORCID: ORCID
Michał Wasiak
1
ORCID: ORCID
Tomasz Czyszanowski
1
Włodzimierz Strupiński
2

  1. Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczańska 219, 90-924 Łódź
  2. Vigo System S.A., ul. Poznańska 129/133, 05-850 Ożarów Mazowiecki
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Abstract

This article discusses the performance of an algorithm for detection of defect centers in semiconductor materials. It is based on direct parameter approximation with nonlinear regression to determine the parameters of thermal emission rate in the photocurrent waveforms. The methodology of the proposed algorithm was presented and its application procedure was described and the results of its application can be seen in measured photocurrent waveforms of a silicon crystal examined with High-Resolution Photoinduced Transient Spectroscopy (HRPITS). The performance of the presented algorithm was verified using simulated photocurrent waveforms without and with noise at the level of 10 -2. This paper presents for the first time the application of the direct approximation method using modern regression and clustering algorithms for the study of defect centers in semiconductors.
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Authors and Affiliations

Witold Kaczmarek
1
Marek Suproniuk
1
Karol Piwowarski
1
Bogdan Perka
1
Piotr Paziewski
1

  1. Institute of Electronic Systems, Department of Electronics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warszawa, Poland
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Abstract

The paper presents the acoustoelectric phenomenon in a layered structure: piezoelectric waveguide – semiconductor. The publication presents an original acoustic method for determining the electrical and electron parameters of the subsurface area in crystalline semiconductors. The method is based on the so-called transverse acoustoelectric effect realized in a layer system: piezoelectric waveguide with Rayleigh surface acoustic wave – semiconductor. The paper discusses the physical foundations of the transverse acoustoelectric effect in the piezoelectric – semiconductor layer system, taking into account the distinctness of the physical properties of the semiconductor near-surface region in relation to its volumetric properties. The work covers many experimental studies of the near-surface region of semiconductors. The original method was presented to determine such surface parameters as: surface potential, surface conductivity, mobility of carriers in the subsurface area, life time of charge carriers in surface states. By means of the acoustic method the following semiconductors have been extensively tested: indium phosphide InP and gallium phosphide GaP. These semiconductors are one of the main semiconductors of group III-V, which are the basis of modern photonics, optoelectronics as well as integrated optics. The work also includes an analysis of the measurement possibilities of the developed acoustic method and its limitations, as well as an analysis of the accuracy of the obtained values of the parameters of the subsurface area of crystalline semiconductors.
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Authors and Affiliations

Tadeusz Pustelny
1

  1. Department of Optoelectronics, Silesian University of Technology, Gliwice, Poland
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Abstract

Variable speed and low voltage electrical drives are commonly operated by frequency converters. According to recent developments, there is a trend in the area of semi-conductors, that switching frequency and voltage slew rate will increase significantly. The aim of these semiconductors is to reduce the switching losses and to increase the switching frequency, which enables to reduce the size of passive components in the power- electric circuit. This results in less material effort and lower cost, for the power electronic component. However, electric motors operated by high slew rate inverters show problems in the winding insulation, which have to be analyzed. Such problems are well known for high voltage machines. Due to the increasing slew rate, this problematic occurs in low voltage machines nowadays as well. Here, the influence of fast switching semiconductors on the winding insulation system is studied, using accelerated ageing tests with fast switching high-voltage generators.

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Authors and Affiliations

Florian Pauli
Andreas Ruf
Kay Hameyer
ORCID: ORCID
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Abstract

The effect of modifications in epi-side (top) gold metallization on a thermal performance and on power roll-over of blue-vio- let III-N-based p-up edge-emitting ridge-waveguide laser diode (RW EEL) was explored in this paper. The calculations were carried out using a two-dimensional self-consistent electrical-thermal model combined with a simplified optical model tuned to a RW EEL fabricated in the Institute of High Pressure Physics (Unipress). Our results suggest that with proper modifica- tions in the III-N-based RW EEL, excluding modifications in its inner structure, it is possible to considerably improve the thermal performance and, thus, increase the maximal output power.

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Authors and Affiliations

M. Kuc
R.P. Sarzała
S. Stańczyk
P. Perlin
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Abstract

The Ag8SnSe6 argyrodite compound was synthesized by the direct melting of the elementary Ag, Sn and Se high purity grade stoichiometric mixture in a sealed silica ampoule. The prepared polycrystalline material was characterized by the X-ray diffraction (XRD), visible (VIS) and near-infrared (NIR) reflection and photoluminescence (PL) spectroscopy. XRD showed that the Ag8SnSe6 crystallizes in orthorhombic structure, Pmn21 space group with lattice parameters: а = 7.89052(6) Å, b = 7.78976(6) Å, c = 11.02717(8) Å. Photoluminescence spectra of the Ag8SnSe6 polycrystalline wafer show two bands at 1675 nm and 1460 nm. Absorption edge position estimated from optical reflectance spectra is located in the 1413–1540 nm wavelength range.

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Authors and Affiliations

Ihor Semkiv
Hryhoriy Ilchuk
Marek Pawlowski
Viktor Kusnezh
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Abstract

Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 µm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
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Authors and Affiliations

Piotr Martyniuk
1
ORCID: ORCID
Djalal Benyahi
2
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  2. Laboratoire des Systèmes Lasers, École Militaire Polytechnique, BP 17 Bordj El Bahri, 16111 Algiers, Algeria
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Abstract

In this paper an analysis of the surface properties of (Ti,Pd,Eu)Ox thin films prepared by magnetron sputtering has been described. In particular, the results of composition and structure investigations were studied in relation to the surface state and optical properties. It was found that (Ti,Pd,Eu)Ox film was nanocrystalline and had a rutile structure. The average crystallites size was equal to 7.8 nm. Films were homogeneous and had densely packed grains. Investigation of the surface properties by XPS showed that titanium was present at 4+ state (in the TiO2form), palladium occurred as PdO2(also at 4+ state), while europium was in Eu2O3form (at 3+ state). In comparison with the unmodiffied TiO2, the coating with Pd and Eu additives had a rather high transparency (approx. 47%) in the visible light range, its optical absorption edge was shifted towards into the longer wavelengths (from 345 nm to 452 nm), and the width of optical energy gap Egopt was nearly twice lower (1.82 eV). Besides, the resistivity of (Ti,Pd,Eu)Ox at room temperature was 1×103 Wcm. In the case of the film as-deposited on Si substrate (p-type) the generation of photocurrent as a response to light beam excitation (λexc = 527 nm) was observed.

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Authors and Affiliations

D. Wojcieszak
D. Kaczmarek
J. Domaradzki
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Abstract

Advances in photonic technologies, with new processes and scopes of photonic integrated circuits, have generated a lot of interest as the field allows to obtain sensors with reduced size and cost and build systems with high interconnectivity and information density. In this work, answering the needs of photonic sensors that must be portable, more energy-efficient, and more accurate than their electrical counterparts, also with a view to the emerging field of neuromorphic photonics, a versatile device is presented. The proposed device makes use of the well-known advantages provided by optical bistability. By combining two distributed feedback-multi quantum well semiconductor laser structures, this new optical multiple inputs - digital output device offers various essential purposes (such as logic gates, wavelength detector and monitoring) with no need for specific manufacturing for each of them. Through a commercial computer-aided design tool, VPIphotonics™, the necessary characterization of proposed device is also described.
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Authors and Affiliations

Antonio M. Alaíz-Gudín
1
ORCID: ORCID
Ana P. González-Marcos
1
ORCID: ORCID

  1. Photonic Technology and Bioengineering Department, Universidad Politécnica de Madrid (UPM), Madrid, 28040 Spain
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Abstract

Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.

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Authors and Affiliations

K. Piwowarski
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Abstract

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In2S3 thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.

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Authors and Affiliations

L. Bychto
M. Maliński
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Abstract

Both a classical instantaneous power method and a method based on equations of instantaneous power orthogonal components balance have been used to analyze power processes in electric circuits with semiconductor elements. Automated method of forming instantaneous power harmonic components was used to obtain analytical expressions and numerical values of instantaneous power components of analyzed electric circuits. A coefficient for estimation of a semiconductor converter nonlinearity degree has been offered.

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Authors and Affiliations

M. Zagirnyak
A. Kalinov
M. Maliakova
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Abstract

A novel all optical measurement scheme is proposed to measure wideband microwave frequencies up to 30 GHz. The proposed method is based on a four-wave mixing (FWM) approach in a semiconductor optical amplifier (SOA) of both even order side-bands generated by an unknown microwave frequency modulating an optical carrier. The optical power of a generated FWM signal depends on frequency spacing between extracted side-bands. A mathematical relation is established between FWM power and frequency of an unknown signal. A calibration curve is drawn based on the mathematical relation which predicts the unknown frequency from power withdrawn after FWM

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Authors and Affiliations

A. Kumar
V. Priye
R. Raj Singh
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Abstract

This paper presents a probabilistic machine learning approach to approximate wavelength values for unmeasured positions on an opto-semiconductor wafer after epitaxy. Insufficient information about optical and opto-electronic properties may lead to undetected specification violations and, consequently, to yield loss or may cause product quality issues. Collection of information is restricted because physical measuring points are expensive and in practice samples are only drawn from 120 specific positions. The purpose of the study is to reduce the risk of uncertainties caused by sampling and measuring inaccuracy and provide reliable approximations. Therefore, a Gaussian process regression is proposed which can determine a point estimation considering measuring inaccuracy and further quantify estimation uncertainty. For evaluation, the proposed method is compared with radial basis function interpolation using wavelength measurement data of 6-inch InGaN wafers. Approximations of these models are evaluated with the root mean square error. Gaussian process regression with radial basis function kernel reaches a root mean square error of 0.814 nm averaged over all wafers. A slight improvement to 0.798 nm could be achieved by using a more complex kernel combination. However, this also leads to a seven times higher computational time. The method further provides probabilistic intervals based on means and dispersions for approximated positions.
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Authors and Affiliations

Stefan M. Stroka
1 2
ORCID: ORCID
Christian Heumann
1
ORCID: ORCID
Fabian Suhrke
2
Kathrin Meindl
2

  1. Department of Statistics, Faculty of Mathematics, Informatics and Statistics, LMU Munich, 80539 Munich, Germany
  2. ams-OSRAM International GmbH, 93055 Regensburg, Germany

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