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Abstract

A superior SiC based thermal protection coating process for carbon composite, which can be especially effective in a hot oxidizing atmosphere, was established in this study. A multi-coating process based on a combination of Chemical Vapor Reaction (CVR) and Chemical Vapor Deposition (CVD) was developed. Various protective coating layers on carbon composite were tested in hot oxidizing surroundings and the test results verified that the thermal ablation rate could be dramatically reduced down to 3.8% when the protective multi-coating was applied. The thermal protection mechanism of the coating layers was also investigated.

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Authors and Affiliations

Soo Bin Bae
ORCID: ORCID
Ji Eun Lee
ORCID: ORCID
Jong Gyu Paik
Nam Choon Cho
ORCID: ORCID
Hyung Ik Lee
ORCID: ORCID
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Abstract

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
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Bibliography

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[4] Makowski, L., Dziadak, B., & Suproniuk, M. (2019). Design and development of original WSN sensor for suspended particulate matter measurements. Opto-Electronics Review, 27(4), 363–368. https://doi.org/10.1016/j.opelre.2019.11.005
[5] Górecki, P., & Górecki, K. (2015). The analysis of accuracy of selected methods of measuring the thermal resistance of IGBTs. Metrology and Measurement Systems, 22(3), 455–464. https://doi.org/10.1515/mms-2015-0036
[6] Matsuura, H., Komeda, M., Kagamihara, S., Iwata, H., Ishihara, R., Hatakeyama, T., Watanabe, T., Kojima, K., Shinohe, T., & Arai, K. (2004). Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H–SiC epilayers. Journal of Applied Physics, 96(5), 2708–2715. https://doi.org/10.1063/1.1775298
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[8] Matsuura, H., Komeda, M., Kagamihara, S., Iwata, H., Ishihara, R., Hatakeyama, T., Watanabe, T., Kojima, K., Shinohe, T., & Arai, K. (2004). Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H–SiC epilayers. Journal of Applied Physics, 96(5), 2708–2715. https://doi.org/10.1063/1.1775298
[9] Suproniuk, M., Pawłowski, M., Wierzbowski, M., Majda-Zdancewicz, E., & Pawłowski, Ma. (2018). Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation. Review of Scientific Instruments, 89(4). https://doi.org/10.1063/1.5004098
[10] Suproniuk, M., Kaczmarek, W., & Pawlowski, M. (2019). A New Approach to Determine the Spectral Images for Defect Centres in High-Resistive Semiconductor Materials. Proceedings of the 23rd International Conference Electronics 2019, Lithuania. https://doi.org/10.1109/ELECTRONICS.2019.8765694
[11] Piwowarski, K. (2020). Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems. Opto-electronics Review, 28(2), 74–81. https://doi.org/10.24425/opelre.2020.132502
[12] Suproniuk, M. (2020). Effect of generation rate on transient photoconductivity of semi-insulating 4H–SiC. Scientific Reports, 10(1). https://doi.org/10.1038/s41598-020-68898-z
[13] Suproniuk, M., Piwowarski, K., Perka, B., Kaminski, P., Kozlowski, R., & Teodorczyk, M. (2019). Blocking characteristics of photoconductive switches based on semi-insulating GAP and GaN. Elektronika ir Elektrotechnika, 25(4), 36–39. https://doi.org/10.5755/j01.eie.25.4.23968
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Authors and Affiliations

Marek Suproniuk
1

  1. Military University of Technology, Faculty of Electronics, Institute of Electronic Systems, gen. S. Kaliskiego 2, Warsaw
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Abstract

This study manufactured a SiC coating layer using the vacuum kinetic spray process and investigated its microstructure and wear properties. SiC powder feedstock with a angular shape and average particle size of 37.4 μm was used to manufacture an SiC coating layer at room temperature in two different process conditions (with different degrees of vacuum). The thickness of the manufactured coating layers were approximately 82.4 μm and 129.4 μm, forming a very thick coating layers. The SiC coating layers consisted of α-SiC and β-SiC phases, which are identical to the feedstock. Cross-sectional observation confirmed that the SiC coating layer formed a dense structure. In order to investigate the wear properties, ball crater tests were performed. The wear test results confirmed that the SiC coating layer with the best wear resistance achieved approximately 4.16 times greater wear resistance compared to the Zr alloy. This study observed the wear surface of the vacuum kinetic sprayed SiC coating layer and identified its wear mechanism. In addition, the potential applications of the SiC coating layer manufactured using the new process were also discussed.

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Authors and Affiliations

Gi-Su Ham
Kyu-Sik Kim
Kee-Ahn Lee
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Abstract

This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
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Bibliography

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Authors and Affiliations

Agnieszka Martychowiec
1
Norbert Kwietniewski
1
Kinga Kondracka
1
Aleksander Werbowy
1
Mariusz Sochacki
1

  1. Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland
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Abstract

This paper presents the results of studies concerning the production and characterization of Al-SiC/W and Cu-SiC/W composite materials with a 30% volume fraction of reinforcing phase particles as well as the influence of corrosion and thermal shocks on the properties of selected metal matrix composites. Spark plasma sintering method (SPS) was applied for the purpose of producing these materials. In order to avoid the decomposition of SiC surface, SiC powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. The obtained results were analysed by the effect of the corrosion and thermal shocks on materials density, hardness, bending strength, tribological and thermal properties. Qualitative X-ray analysis and observation of microstructure of sample surfaces after corrosion tests and thermal shocks were also conducted. The use of PVD technique allows us to obtain an evenly distributed layer of titanium with a constant thickness of 1.5 µm. It was found that adverse environmental conditions and increased temperature result in a change in the material behaviour in wear tests.

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Authors and Affiliations

A. Strojny-Nędza
P. Egizabal
K. Pietrzak
R. Zieliński
K. Kaszyca
A. Piątkowska
M. Chmielewski
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Abstract

The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.

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Authors and Affiliations

Jacek Rąbkowski
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Abstract

Preliminary tests aimed at obtaining a cellular SiC/iron alloy composite with a spatial structure of mutually intersecting skeletons, using a

porous ceramic preform have been conducted. The possibility of obtaining such a composite joint using a SiC material with an oxynitride

bonding and grey cast iron with flake graphite has been confirmed. Porous ceramic preforms were made by pouring the gelling ceramic

suspension over a foamed polymer base which was next fired. The obtained samples of materials were subjected to macroscopic and

microscopic observations as well as investigations into the chemical composition in microareas. It was found that the minimum width of a

channel in the preform, which in the case of pressureless infiltration enables molten cast iron penetration, ranges from 0.10 to 0.17 mm. It

was also found that the ceramic material applied was characterized by good metal wettability. The ceramics/metal contact area always has

a transition zone (when the channel width is big enough), where mixing of the components of both composite elements takes place.

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Authors and Affiliations

M. Cholewa
B. Lipowska
B. Psiuk
Ł. Kozakiewicz
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Abstract

439L stainless steel composites blended with fifteen micron SiC particles were prepared by uniaxial pressing of raw powders at 100 MPa and conventional sintering at 1350oC for 2 h. Based on the results of X-ray diffraction analysis, dissolution of SiC particles were apparent. The 5 vol% SiC specimen demonstrated maximal densification (91.5%) among prepared specimens ­(0-10 vol% SiC); the relative density was higher than the specimens in the literature (80-84%) prepared by a similar process but at a higher forming pressure (700 MPa). The stress-strain curve and yield strength were also maximal at the 5 vol% of SiC, indicating that densification is the most important parameter determining the mechanical property. The added SiC particles in this study did not serve as the reinforcement phase for the 439L steel matrix but as a liquid-phase-sintering agent for facilitating densification, which eventually improved the mechanical property of the sintered product.

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Authors and Affiliations

Sang Woo Lee
Hyunho Shin
Kyong Yop Rhee
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Abstract

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

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Authors and Affiliations

Damian Bisewski
Marcin Myśliwiec
Krzysztof Górecki
Ryszard Kisiel
Janusz Zarębski
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Abstract

This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional – it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% – peak value is 97.8%.

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Authors and Affiliations

P. Trochimiuk
M. Zdanowski
J. Rabkowski
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Abstract

This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
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Authors and Affiliations

Michał Gwóźdź
1
ORCID: ORCID
Łukasz Ciepliński
1
ORCID: ORCID

  1. Poznan University of Technology, Faculty of Control, Robotics and Electrical Engineering, Piotrowo 3A, 60-965 Poznan, Poland
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Abstract

Oxidation and indentation properties of silicon carbide-coated carbon composites were investigated to analyze its durability under atmospheric thermal shock conditions. The silicon carbide-coated samples were prepared either with chemical vapor deposition or chemical vapor reaction/chemical vapor deposition hybrid coating. The remnant weight of uncoated and coated samples was investigated after each thermal shock cycle. The surface and cross-section of coated samples were then analyzed to confirm morphological changes of the coating layers. The spherical indentation test for uncoated and coated samples were also performed. As a result, silicon carbide coating improved the oxidation resistance, elastic modulus, and hardness of carbon composites. Hybrid coating drastically enhanced the durability of samples at high temperature in atmospheric conditions.
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Authors and Affiliations

Ji Eun Lee
1
ORCID: ORCID
Soo Bin Bae
1
ORCID: ORCID
Nam Choon Cho
1
ORCID: ORCID
Hyung Ik Lee
1
ORCID: ORCID
Zicheng Meng
2
ORCID: ORCID
Kee Sung Lee
2
ORCID: ORCID

  1. Agency for Defense Development, Yuseong P.O. Box 35, Daejeon, 34186, Korea
  2. Kookmin University, School of Mechanical Engineering, JEONGNEUNG-RO 77, SEONGBUK-GU, SEOUL, 02707, KOREA
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Abstract

In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge at the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.

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Authors and Affiliations

A. Taube
M. Sochacki
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Abstract

Wider application of silicon carbide (SiC) is anticipated for increasing the durability of various structural facilities. For this study, SiC was fabricated with decreased electrical resistivity for precision electrical discharge machining. Two-step reaction sintering by infiltration of molten Fe-Si alloy was applied for SiC fabrication. The procedure included first sintering at 973 K in Ar gas atmosphere and second sintering by spontaneous infiltration of molten Fe-75%Si alloy at 1693 K in vacuum. The sintered structure porosity became very low, forming 3C-type SiC. Results confirmed that molten Fe-75%Si alloy infiltration occurred because of reaction sintering. The electrical resistivity of the sintered SiC infiltrated by molten Fe-75%Si alloy can be improved to be two orders of magnitude lower than that by molten Si, consequently maintaining the high performance of SiC.

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Authors and Affiliations

Yoshitsugu Hanada
Yang Xiao
Akio Sonoda
Hyo-Gyoung Kang
Hideaki Nagayoshi
Atsuo Yamamoto
Tatsuya Tokunaga
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Abstract

Ultrasound-promoted transient liquid phase bonding (U-TLP) is a high quality, high efficiency, and low-cost method for fast bonding of difficult-wetting materials in the atmospheric environment. In this paper, U-TLP was used to bond SiC particles reinforced aluminium-based metal matrix composite which particle volume fraction was 70%. The pure zinc foil was used as the intermediate layer. The effects of ultrasonic on microstructure evolution and mechanical properties of joints during the transient liquefaction stage were investigated. The mechanism of ultrasonic effects in the transient liquefaction stage of U-TLP was also inducted. The results showed that high volume fraction SiCp/Al MMCs were bonded well at low temperature in the air environment. Ultrasonic vibration can remove the oxide film on the surface of aluminum matrix composites, enhance the wettability of SiC particles with weld metal, promote atomic diffusion and homogenization of SiC particles, and improve the welding quality and efficiency. Reasonable increase of ultrasonic vibration time could effectively improve the joint strength.
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Authors and Affiliations

Changzhuang Zhou
1
ORCID: ORCID
Lin Ma
1 2
ORCID: ORCID
Chao Zhu
1
ORCID: ORCID
Qinghe Cui
1
ORCID: ORCID
Jindi Liang
1
ORCID: ORCID
Yujian Song
1
ORCID: ORCID

  1. Shenyang Aerospace University, School of Materials Science and Engineering, Shenyang 110136, China
  2. The University of Queensland, Australia
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Abstract

The article discusses benefits associated with the use of silicon carbide in the process of melting gray cast iron and ductile cast iron in induction electric furnaces. It presents the analysis of the impact of various charge materials and the addition of a variable amount of SiC and FeSi to the fixed charge when melting cast iron of grades GJS 400-15 and GJS 500-7 on mechanical properties and microstructure. Moreover, the article includes an analysis of the efficiency of carburization and the increase in the content of silicon during the application of SiC. The article also presents the results of the study of primary modification using silicon carbide at the minimum temperature of Temin eutectic and Tsol solidus. Based on analysis of the literature, conducted research, and calculations, it was found that the addition of silicon carbide has a beneficial impact on the properties of melted cast iron. The addition of SiC in the charge increases the content of C and Si without increasing the amount of contaminations. The addition of SiC at reduced pig iron presence in the charge decreases production costs, while the use of SiC as an inoculant increases both Temin and Tsol, which is beneficial from the point of view of cast iron nucleation.
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Authors and Affiliations

K. Janerka
1
ORCID: ORCID
Ł. Kostrzewski
2
ORCID: ORCID
M. Stawarz
1
ORCID: ORCID
J. Jezierski
1
ORCID: ORCID
J. Szajnar
1
ORCID: ORCID

  1. Silesian University of Technology, Department of Foundry Engineering, 7 Towarowa Str., 44-100 Gliwice, Poland
  2. Leszczyńska Fabryka Pomp, 15 Fabryczna Str., 64-100 Leszno, Poland
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Abstract

The paper presents the issue of synthetic cast iron production in the electric induction furnace exclusively on the steel scrap base. Silicon

carbide and synthetic graphite were used as carburizers. The carburizers were introduced with solid charge or added on the liquid metal

surface. The chemical analysis of the produced cast iron, the carburization efficiency and microstructure features were presented in the

paper. It was stated that ferrosilicon can be replaced by silicon carbide during the synthetic cast iron melting process. However, due to its

chemical composition (30% C and 70% Si) which causes significant silicon content in iron increase, the carbon deficit can be partly

compensated by the carburizer introduction. Moreover it was shown that the best carbon and silicon assimilation rate is obtained where the

silicon carbide is being introduced together with solid charge. When it is thrown onto liquid alloy surface the efficiency of the process is

almost two times less and the melting process lasts dozen minutes long. The microstructure of the cast iron produced with the silicon

carbide shows more bulky graphite flakes than inside the microstructure of cast iron produced on the pig iron base.

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Authors and Affiliations

J. Szajnar
A. Stojczew
J. Jezierski
M. Pawlyta
K. Janerka
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Abstract

The paper presents a concept of a control system for a high-frequency three-phase PWM grid-tied converter (3x400 V / 50 Hz) that performs functions of a 10-kW DC power supply with voltage range of 600÷800 V and of a reactive power compensator. Simulation tests (in PLECS) allowed proper selection of semiconductor switches between fast IGBTs and silicon carbide MOSFETs. As the main criterion minimum amount of power losses in semiconductor devices was adopted. Switching frequency of at least 40 kHz was used with the aim of minimizing size of passive filters (chokes, capacitors) both on the AC side and on the DC side. Simulation results have been confirmed in experimental studies of the PWM converter, the power factor of which (inductive and capacitive) could be regulated in range from 0.7 to 1.0 with THDi of line currents below 5% and energy efficiency of approximately 98.5%. The control system was implemented in Texas Instruments TMS320F28377S microcontroller.

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Authors and Affiliations

Roman Barlik
Piotr Grzejszczak
Bernard Leszczyński
Marek Szymczak

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