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Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells

Marek Szindler Magdalena M. Szindler
Opto-Electronics Review | 2021 | 29 | 4 | 181-186 | DOI: 10.24425/opelre.2021.139602
Keywords antireflection coating atomic layer deposition method solar cells
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Abstract

The technology of manufacturing silicon solar cells is complex and consists of several stages. The final steps in succession are the deposition of antireflection layer and discharge contacts. Metallic contacts are usually deposited by the screen printing method and then, fired at high temperature. Therefore, this article presents the results of a research on the effect of heat treatment on the properties of the Al2O3 thin film previously deposited by the atomic layer deposition method. It works well as both passivating and antireflection coating. Moreover, heat treatment affects the value of the cell short-circuit current and, thus, its efficiency. The surface morphology, optical and electrical properties were investigated, describing the influence of heat treatment on the properties of the deposited layers and the manufactured solar cells.
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Bibliography

  1. Marks-Bielska, R. et al. The importance of renewable energy sources in Poland’s energy Energies 13, 1–23 (2020). https://doi.org/10.3390/en13184624
  2. Asfar, Y. et al. Evaluating Photovoltaic Performance Indoors. in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC). 1948–1951 (IEEE, Austin, USA 2012).
  3. Ranjan, S. et al. Silicon solar cell production. Comput. Chem. Eng. 35, 1439–1453 (2011). https://doi.org/10.1016/j.compchemeng.2011.04.017
  4. Drygala, A. et al. Influence of laser texturization surface and atomic layer deposition on optical properties of polycrystalline silicon. Int. J. Hydrog. Energy 41, 7563–7567 (2016). https://doi.org/10.1016/j.ijhydene.2015.12.180
  5. Hou, G., Garcia, I. & Rey-Stolle, I. High-low refractive index stacks for broadband antireflection coatings for multijunction solar cells. Sol. Energy 217, 29–39 (2021). https://doi.org/10.1016/j.solener.2021.01.060
  6. Dobrzański, L. A., Szindler, M., Drygała, A. & Szindler, M.M., Silicon solar cells with Al2O3 antireflection coating. Cen. Eur. J. Phys. 12, 666–670 (2014). https://doi.org/10.2478/s11534-014-0500-9
  7. Sarkar, S. & Pradhan, S. K. Silica-based antireflection coating by glancing angle deposition. Surf. Eng. 35, 982–985. (2019). https://doi.org/10.1080/02670844.2019.1596578
  8. Szindler, M. Szindler, M. M., Boryło, P. & Jung, T. Structure and optical properties of TiO2 thin films deposited by ALD Open Phys. 15, 1067–1071 (2017). https://doi.org/10.1515/phys-2017-0137
  9. Król, K. et al. Influence of atomic layer deposition temperature on the electrical properties of Al/ZrO2/SiO2/4H-SiC metal-oxide semiconductor structures. Phys. Status Solidi (A) 215, 1–7 (2018). https://doi.org/10.1002/pssa.201700882
  10. Boryło, P. et al. Structure and properties of Al2O3 thin films deposited by ALD proces. Vacuum 131, 319–326 (2016). https://doi.org/10.1016/j.vacuum.2016.07.013
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  18. Swatowska, B. Antireflective and passivation properties of the photovoltaic structure with Al2O3 layer of different thickness. Microelectron. Int. 35, 177–180 (2018). https://doi.org/10.1108/MI-04-2018-0020
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Authors and Affiliations

Marek Szindler
1
ORCID: ORCID
Magdalena M. Szindler
2
ORCID: ORCID
  1. Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, 7 Towarowa St., 44-100 Gliwice, Poland
  2. Department of Engineering Materials and Biomaterials, Faculty of Mechanical Engineering, Silesian University of Technology, 18a Konarskiego St., 44-100 Gliwice, Poland

The Al2O3/TiO2 double antireflection coating deposited by ALD method

Marek Szindler Magdalena M. Szindler Justyna Orwat Grażyna Kulesza-Matlak
Opto-Electronics Review | 2022 | 30 | 3 | e141952 | DOI: 10.24425/opelre.2022.141952
Keywords antireflection coating atomic layer deposition method solar cells
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Abstract

Al 2O 3/TiO 2 thin films were deposited onto monocrystalline silicon surfaces using an atomic layer deposition. Their surface morphology and optical properties were examined for their possible use in solar cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness was measured using a spectroscopic reflectometer. The refractive index and the reflection characteristics were determined. First, the optical properties of the Al 2O 3 thin film and its influence on recombination in the semiconductor were examined. In this way, it can fulfil a double role in a solar cell. Since reflection reduction was only achieved in a narrow range, it was decided to use the Al 2O 3/TiO 2 system. Thanks to this solution, the light reflection was reduced in a wide range (even below 0.2%).
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Authors and Affiliations

Marek Szindler
1
ORCID: ORCID
Magdalena M. Szindler
2
ORCID: ORCID
Justyna Orwat
3
ORCID: ORCID
Grażyna Kulesza-Matlak
4
ORCID: ORCID
  1. Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, 7 Towarowa St., 44-100 Gliwice, Poland
  2. Department of Engineering Materials and Biomaterials, Silesian University of Technology, 18a Konarskiego St., 44-100 Gliwice, Poland
  3. Department of Mining, Safety Engineering and Industrial Automation, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland
  4. Institute of Metallurgy and Materials Science of Polish Academy of Sciences, 25 Reymonta St., 30-059 Krakow, Poland

Application of Al 2O 3 ZnO, and TiO 2 ALD thin films as antireflection coating in the silicon solar cells

Marek Szindler Magdalena M. Szindler
Opto-Electronics Review | 2023 | 31 | 4 | e148223 | DOI: 10.24425/opelre.2023.148223
Keywords optical thin film antireflection coating atomic layer deposition solar cells
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Abstract

The article describes the results of a research on the surface morphology and optical properties of Al 2O 3, ZnO, and TiO 2 thin films deposited by atomic layer deposition (ALD) for applications in silicon solar cells. The surface topography and elemental composition were characterised using a scanning electron microscope, and thickness was determined using an optical reflectometer. The samples were structurally examined using a Raman spectrometer. The structural variant was identified: for Al 2O 3 it is sapphire, for TiO 2 it is anatase, and for ZnO it is wurtzite. Possibilities of minimising light reflection using single and double thin film systems below 5% were presented. For the first time, the effectiveness of these thin films on the current-voltage characteristics and electrical parameters of manufactured silicon solar cells was examined and compared. The solar cell with the highest efficiency of converting solar radiation into electricity was obtained for Al 2O 3/TiO 2 and the efficiency of such a photovoltaic device was 18.74%.
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Authors and Affiliations

Marek Szindler
1
ORCID: ORCID
Magdalena M. Szindler
2
ORCID: ORCID
  1. Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, ul. Towarowa 7, 44-100 Gliwice, Poland
  2. Department of Engineering Materials and Biomaterials, Faculty of Mechanical Engineering, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

Electrical Characteristics of Tin Oxide Films Grown by Thermal Atomic Layer Deposition

Seong Yu Yoon Byung Joon Choi
Archives of Metallurgy and Materials | 2020 | vol. 65 | No 3 | 1041-1044 | DOI: 10.24425/amm.2020.133214
Keywords Atomic layer deposition tin oxide electrical property oxygen adsorption
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Abstract

Tin dioxide (SnO2) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2/Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.

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Authors and Affiliations

Seong Yu Yoon
Byung Joon Choi
ORCID: ORCID

Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition

Daeho Kim Dong Ha Kim Doh-Hyung Riu Byung Joon Choi
Archives of Metallurgy and Materials | 2018 | vol. 63 | No 2
Keywords atomic layer deposition tin oxide growth rate film density optical band gap
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Abstract

Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.
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Authors and Affiliations

Daeho Kim
Dong Ha Kim
Doh-Hyung Riu
Byung Joon Choi

Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films

Sung Yeon Ryu Hee Ju Yun Min Hwan Lee Byung Joon Choi
Archives of Metallurgy and Materials | 2021 | vol. 66 | No 3 | 755-758 | DOI: 10.24425/amm.2021.136375
Keywords gadolinium oxide (Gd2O3) rare-earth oxide atomic layer deposition hydrophobicity electrical property
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Abstract

Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.
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Bibliography

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Authors and Affiliations

Sung Yeon Ryu
1
Hee Ju Yun
1
Min Hwan Lee
2
Byung Joon Choi
1
ORCID: ORCID
  1. Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea
  2. University of California Merced, Department of Mechanical Engineering, Merced, California, USA

Structural, Electrical, and Optical Properties of ZnO Films Grown by Atomic Layer Deposition at Low Temperature

Ji Young Park Ye Bin Weon Myeong Jun Jung Byung Joon Choi
Archives of Metallurgy and Materials | 2022 | vol. 67 | No 4 | 1503-1506 | DOI: 10.24425/amm.2022.141082
Keywords Zinc Oxide (ZnO) Atomic layer deposition Low temperature growth Optoelectronic properties
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Abstract

Zinc oxide (ZnO) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of ZnO thin films expands diverse applications, such as growth on glass and organic materials, and it is also cost effective. However, the optical and electrical properties of ZnO films grown at low temperatures may be inferior owing to their low crystallinity and impurities. In this study, ZnO thin films were prepared by atomic layer deposition on SiO2 and glass substrates in the temperature range of 46-141℃. All films had a hexagonal würtzite structure. The carrier concentration and electrical conductivity were also investigated. The low-temperature grown films showed similar carrier concentration (a few 1019 cm−3 at 141°C), but possessed lower electrical conductivity compared to high-temperature (>200°C) grown films. The optical transmittance of 20 nm thin ZnO film reached approximately 90% under visible light irradiation. Additionally, bandgap energies in the range of 3.23-3.28 eV were determined from the Tauc plot. Overall, the optical properties were comparable to those of ZnO films grown at high temperature.
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Authors and Affiliations

Ji Young Park
1
ORCID: ORCID
Ye Bin Weon
1
ORCID: ORCID
Myeong Jun Jung
1
ORCID: ORCID
Byung Joon Choi
1
ORCID: ORCID
  1. Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul, Korea

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