In this work studies ofM OVPE growth of InAlGaAs/AlGaAs/GaAs heterostructures are presented. The HRXRD and SIMS measurements indicate the high structural and optical properties as well as high uniformity oft hickness and composition ofI nAlGaAs quantum wells. This work is the .rst step towards elaboration oft he technology oft he strained InAlGaAs/GaAs heterostructures for advanced optoelectronic devices working in the visible part oft he spectrum. The investigations ofSi (n-type), Zn (p-type) .-doped GaAs epilayers and centre Si-.-doped InxGa1-xAs single quantum well (SQW) are presented. The .-doping layer was formed by SiH4 or DEZn introduction during the growth interruption. The electrical and optical properties oft he obtained structures were examined using C-V measurement, EC-V electrochemical pro.ler, Raman spectroscopy (RS), photore.ectance (PR) and photocurrent (PC) spectroscopies. Technology oft hick GaN layers grown on sapphire by HVPE is very promising as a part off reestanding GaN substrates manufacturing. Further works will be focused on the optimisation of growth, separating layers from substrates and surface polishing. The in.uence oft he growth parameters on the properties of( Ga, Al)N/Al2O3 and Mg dopant incorporation was studied.

The aims of this study were to enhance electronic, photophysical and optical properties of molecular semiconductors. For this purpose, the isomers of the B-doped molecule (5,5′-Dibromo-2,2′-bithiophene) have been investigated by density functional theory (DFT) based on B3LYP/6-311++G** level of theory. The isomers were first calculated using kick algorithm. The most stable isomers of the B-doped molecule are presented depending on the binding energy, fragmentation energy, ionization potential, electron affinity, chemical hardness, refractive index, radial distribution function and HOMO-LUMO energy gap based on DFT. Ultraviolet-visible (UV–vis) spectra have been also researched by time-dependent (TD) DFT calculations. The value of a band gap for isomer with the lowest total energy decreases from 4.20 to 3.47 eV while the maximum peaks of the absorbance and emission increase from 292 to 324 nm and 392 to 440 nm with boron doped into 5,5′-Dibromo-2,2′-bithiophene. Obtained results reveal that the B-doped molecule has more desirable optoelectronic properties than the pure molecule.

The study examined the impact of the angle of incidence of mechanical waves on various types of quasi one-dimensional superlattice. Binary periodic structure, quasi-periodic distribution of Thue-Morse layers and Severin’s aperiodic multilayer were used. Using the concatenation and recursive rules, the distribution of layers was determined for individual structure types for generation numbers equal to 3, 4 and 5. The structures were selected so that the thickness of the composite was the same for each type of distribution for a given generation number value. Transfer Matrix Method algorithm was used to determine reflectance. The band structure of reflectance has been demonstrated for incidence angles up to 90 degrees at mechanical wave frequencies up to 50 kHz. The existence of wide bands of high reflectance above the acoustic frequencies was demonstrated for the analyzed structures. Increasing the layer thickness caused an inhomogeneous shifts of transmission peaks towards lower frequencies.

In this work studies on propagation properties of a microstructured polymer optical fibre infiltrated with a nematic liquid crystal are presented. Specifically, the influence of an infiltration method on the LC molecular alignment inside fibre air-channels and, thus, on light guidance is discussed. Switching between propagation mechanisms, namely the transition from modified total internal reflection (mTIR) to the photonic bandgap effect obtained by varying external temperature is also demonstrated.